2SK3074(TE12L.F) Toshiba, 2SK3074(TE12L.F) Datasheet

2SK3074(TE12L.F)

Manufacturer Part Number

2SK3074(TE12L.F)

Description

Manufacturer

Toshiba

Datasheet

1.2SK3074TE12L.F.pdf (4 pages)

Specifications of 2SK3074(TE12L.F)

Application

VHF/UHF

Channel Type

Continuous Drain Current

Drain Source Voltage (max)

30V

Output Power (max)

0.63W(Min)

Power Gain (typ)@vds

14.9(Min)@9.6VdB

Package Type

PW-Mini

Pin Count

3 +Tab

Operating Temp Range

-45C to 150C

Drain Efficiency (typ)

45(Min)%

Mounting

Surface Mount

Number Of Elements

Power Dissipation (max)

3000mW

Screening Level

Automotive

Lead Free Status / Rohs Status

Compliant

Current page: 1 of 4
Download datasheet (161Kb)

RF POWER MOSFET

FOR VHF−AND UHF-BAND POWER AMPLIFIER

ABSOLUTE MAXIMUM RATINGS

MARKING

Caution: This device is sensitive to electrostatic discharge.

(Note)The TOSHIBA products listed in this document are intended for high

frequency Power Amplifier of telecommunications equipment.These TOSHIBA

products are neither intended nor warranted for any other use.Do not use

these TOSHIBA products listed in this document except for high frequency

Power Amplifier of telecommunications equipment.

Output Power

Power Gain

Drain Efficiency

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

Note:

Note 1: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB

Lot No.

Using continuously under heavy loads (e.g. the application of high

CHARACTERISTIC

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Please make enough tool and equipment earthed when you handle.

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

1. Gate

2. Source

3. Drain

: P

: G

: η

Part No. (or abbreviation code)

≥ 45%

≥ 630mW

≥ 14.9dB

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

SYMBOL

(Note 1)

GSS

DSS

stg

2SK3074

(Ta = 25°C)

−45~150

RATING

150

UNIT

°C

Weight: 0.05 g (typ.)

JEDEC

JEITA

TOSHIBA

2−5K1D

SC−62

2007-11-01

—

2SK3074

Unit in mm

Related parts for 2SK3074(TE12L.F)

2SK3074(TE12L.F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 25° ...

Page 2

... ELECTRICAL CHARACTERISTICS CHARACTERISTIC Output Power Drain Efficiency Power Gain Gate Threshold Voltage Drain Cut-off Current Gate-Source Leakage Current Note 2: These characteristic values are measured using measurement tools specified by Toshiba. RF OUTPUT POWER TEST FIXTURE (Ta = 25°C) SYMBOL TEST CONDITION 9.6V DS Iidle = 50mA (V = adjust) η ...

Page 3

Note 3: These are only typical curves and devices are not necessarily guaranteed at these curves. 3 2SK3074 2007-11-01 ...

Page 4

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

Related keywords

2SK3074(TE12L.F) datasheet
2SK3074(TE12L.F) data sheet
2SK3074(TE12L.F) pdf datasheet
2SK3074(TE12L.F) component
2SK3074(TE12L.F) part
2SK3074(TE12L.F) distributor
2SK3074(TE12L.F) RoHS
2SK3074(TE12L.F) datasheet download