IRFR9120N International Rectifier, IRFR9120N Datasheet - Page 7

• Manufacturer Part Number: IRFR9120N
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRFR9120N

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.48Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 6.6A
• Power Dissipation: 40W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Not Compliant

V
GS
Re-Applied
Voltage
Reverse
Recovery
Current
*
Reverse Polarity of D.U.T for P-Channel
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
*
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Peak Diode Recovery dv/dt Test Circuit
Fig 14. For P-Channel HEXFETS
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
I
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Low Stray Inductance
Ground Plane
Current Transformer
Low Leakage Inductance
D =
-
G
Period
P.W.
+
IRFR/U9120N
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD