IRF7341 International Rectifier, IRF7341 Datasheet - Page 2

• Manufacturer Part Number: IRF7341
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF7341

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.05Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 4.7A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / Rohs Status: Not Compliant

IRF7341
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
I
I
V
t
Q
Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
SM
S
rr
d(on)
r
d(off)
f
DSS
fs
GSS
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
2
g
gs
gd
DS(on)
max. junction temperature. ( See fig. 11 )
Repetitive rating; pulse width limited by
(BR)DSS
Starting T
R
G
= 25Ω, I
/∆T
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25°C, L = 6.5mH
AS
= 4.7A. (See Figure 8)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
…
T
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
I
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
SD
––– 0.059 –––
––– 0.043 0.050
––– 0.056 0.065
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
7.9
J
55
≤ 150°C
≤ 4.7A, di/dt ≤ 220A/µs, V
–––
120
–––
–––
–––
–––
–––
––– -100
740
190
–––
2.3
7.0
8.3
3.2
60
24
32
13
71
170
–––
–––
–––
–––
–––
–––
100
1.2
2.0
3.4
4.8
90
25
36
10
12
48
20
V/°C
nC
nC
pF
ns
V
V
Ω
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs ƒ
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 9
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
DD
= 4.5A
= 1.0A
= 25°C, I
= 25°C, I
= 28Ω, „
= 6.0Ω
= 20V
= 0V, I
= 10V, I
= 4.5V, I
= V
= 10V, I
= 55V, V
= 55V, V
= -20V
= 44V
= 10V, See Fig. 10 „
= 0V
= 25V
= 28V
≤ V
GS
Conditions
(BR)DSS
, I
D
S
F
Conditions
D
D
D
= 250µA
D
GS
GS
= 2.0A, V
= 2.0A
= 250µA
= 4.5A
= 4.7A „
= 3.8A „
,
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 55°C
= 0V ƒ
G
D
S