IRFS31N20DHR International Rectifier, IRFS31N20DHR Datasheet

IRFS31N20DHR

Manufacturer Part Number
IRFS31N20DHR
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of IRFS31N20DHR

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.082Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±30V
Continuous Drain Current
31A
Power Dissipation
3.1W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / Rohs Status
Not Compliant
Typical SMPS Topologies
www.irf.com
Applications
Absolute Maximum Ratings
Benefits
Notes
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
J
STG
D
D
GS
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
@T
@T
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Telecom 48V Input Forward Converters
Switching Losses
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
through
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Power Dissipation
to Simplify Design, (See
are on page 11
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFB31N20D
TO-220AB
V
200V
DSS
300 (1.6mm from case )
HEXFET
-55 to + 175
10 lbf•in (1.1N•m)
IRFS31N20D
R
Max.
124
200
± 30
DS(on)
3.1
1.3
2.1
31
21
D
2
0.082
Pak
®
IRFSL31N20D
Power MOSFET
IRFB31N20D
IRFS31N20D
max
IRFSL31N20D
PD- 93805B
TO-262
Units
W/°C
31A
V/ns
°C
I
W
A
V
D
1
2/14/00

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IRFS31N20DHR Summary of contents

Page 1

Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter ...

Page 2

IRFB/IRFS/IRFSL31N20D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 12V 10V 8.0V 7.0V 6.5V 100 6.0V BOTTOM 5. 20µs PULSE WIDTH 5. 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

IRFB/IRFS/IRFSL31N20D 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL ...

Page 6

IRFB/IRFS/IRFSL31N20D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped ...

Page 7

D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-channel HEXFET www.irf.com IRFB/IRFS/IRFSL31N20D ...

Page 8

IRFB/IRFS/IRFSL31N20D TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 9

D Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 ...

Page 10

IRFB/IRFS/IRFSL31N20D TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com ...

Page 11

D Pak Tape & Reel Information TIO ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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