IRFS38N20D International Rectifier, IRFS38N20D Datasheet - Page 4

• Manufacturer Part Number: IRFS38N20D
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRFS38N20D

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.054Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 38A
• Power Dissipation: 3.8W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Not Compliant

IRFB/S/SL38N20DPbF
100000
1000.00
10000
4
100.00
1000
10.00
100
1.00
0.10
10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
0.5
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
T J = 25°C
1.0
Crss
Ciss
Coss
1.5
f = 1 MHZ
100
V GS = 0V
2.0
SHORTED
2.5
1000
1000
100
0.1
12
10
10
Fig 8. Maximum Safe Operating Area
8
6
4
2
0
1
0
1
Fig 6. Typical Gate Charge Vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 26A
Gate-to-Source Voltage
10
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 160V
V DS = 100V
30
40
100
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50
10msec
100µsec
1msec
60
1000
70