2N3810 MICROSEMI, 2N3810 Datasheet

2N3810

Manufacturer Part Number
2N3810
Description
Manufacturer
MICROSEMI
Datasheet
1.2N3810.pdf (3 pages)

Specifications of 2N3810

Transistor Polarity
PNP
Number Of Elements
2
Collector-emitter Voltage
60V
Collector-base Voltage
60V
Emitter-base Voltage
5V
Collector Current (dc) (max)
50mA
Dc Current Gain (min)
100
Power Dissipation
350mW
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
6
Package Type
TO-78
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2N3810JANTX
Manufacturer:
Microsemi
Quantity:
1 400
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DEVICES
T4-LDS-0118 Rev. 1 (091095)
ABSOLUTE MAXIMUM RATINGS (T
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature
Range
Note:
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
Collector-Base Cutoff Current
V
V
Emitter-Base Cutoff Current
V
V
C
CB
CB
EB
EB
= 100μAdc
= 50Vdc
= 60Vdc
= 4.0Vdc
= 5.0Vdc
1.
2.
Derate linearly 1.143mW/°C for T
Derate linearly 2.00mW/°C for T
Parameters / Test Conditions
Parameters / Test Conditions
2N3810
2N3810L
2N3810U
@ T
A
= +25°C
2N3811
2N3811L
2N3811U
A
PNP SILICON DUAL TRANSISTOR
A
> +25°C (both sections)
> +25°C (one section)
C
= +25°C unless otherwise noted)
A
= +25°C, unless otherwise noted)
Qualified per MIL-PRF-19500 /336
Symbol
T
V
V
V
J
P
, T
I
CBO
CEO
EBO
C
T
V
Symbol
stg
(BR)CEO
I
I
CBO
EBO
Section
One
200
TECHNICAL DATA SHEET
Min.
-65 to +200
60
1
Value
5.0
60
60
50
Sections
Both
350
Max.
10
10
10
10
2
mAdc
ηAdc
μAdc
ηAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
mW
Vdc
°C
JANTX
JANTV
LEVELS
JANS
TO-78
JAN
Page 1 of 3

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2N3810 Summary of contents

Page 1

... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com DEVICES 2N3810 2N3810L 2N3810U ABSOLUTE MAXIMUM RATINGS (T Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ T = +25°C A Operating & Storage Junction Temperature ...

Page 2

... PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 Symbol 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L, 2N3811U V V 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U Min. Max. h 100 FE 150 450 150 450 ...

Page 3

... C CE T4-LDS-0118 Rev. 1 (091095) TECHNICAL DATA SHEET PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 2N3810 3.0kΩ 3.0kΩ 2N3810 2N3810 3.0kΩ 3.0kΩ 2N3810 2N3811 3.0kΩ 3.0kΩ 2N3811 3.0kΩ 2N3811 2N3811 3.0kΩ G Symbol Min. ...

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