AUIRF7416Q International Rectifier, AUIRF7416Q Datasheet - Page 2

• Manufacturer Part Number: AUIRF7416Q
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRF7416Q

• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Gate Charge Qg: 61 nC
• Lead Free Status / Rohs Status: Details


‚
ΔV
Notes:
Static Electrical Characteristics @ T
V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(BR)DSS
GS(th)
SD
2
DS(on)
iss
oss
rss
g
gs
gd
rr
(BR)DSS
/ΔT
Ω
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
Parameter
™
J
= 25°C (unless otherwise specified)
ƒ
„
…
J
= 25°C (unless otherwise specified)
I
SD
≤
≤
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
––– -0.024 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
5.6
≤
1700
–––
––– 0.020
––– 0.035
–––
–––
–––
–––
–––
–––
890
410
–––
–––
–––
8.0
61
22
18
49
59
60
56
99
≤
-2.04
-100
-1.0
-3.1
-1.0
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
150
-25
-45
92
12
32
85
V/°C
μA
nA
nC
nC
pF
ns
ns
Ω
V
V
S
A
V
≤
≤
≤
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -5.6A
= -5.6A
= 25°C, I
= 25°C,I
= 6.2Ω
= 2.7Ω, See Fig. 10
= V
= -10V, I
= -24V, V
= -24V, V
= -24V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V, See Fig. 6 & 9
= -15V
= 0V
GS
, I
Conditions
Conditions
Conditions
D
F
D
S
= -250μA
= -5.6A
D
D
= -5.6A, V
= -250μA
D
GS
GS
= -5.6A
= -2.8A
= -2.8A
e
= 0V
= 0V, T
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D
= -1mA
f
G
f
GS
f
J
= 125°C
= 0V
f
D
S
e