ECH8661-TL-H ON Semiconductor, ECH8661-TL-H Datasheet - Page 4

• Manufacturer Part Number: ECH8661-TL-H
• Description: MOSFET N/P-CH 30V 7A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8661-TL-H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5.5A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 11.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
100
1.0
0.1
10
10
10
0.01
7
5
3
2
7
5
3
2
7
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
0
0.1
0
0
V DS =15V
I D =7A
--0.1 --0.2
1
2
2
3
2
3
Drain-to-Source Voltage, V DS -- V
5 7
3
Total Gate Charge, Qg -- nC
t d (on)
--0.3
5
0.1
Drain Current, I D -- A
Drain Current, I D -- A
SW Time -- I D
4
7
V GS -- Qg
|
--0.4
I D -- V DS
1.0
2
y
5
fs | -- I D
3
--0.5
6
5 7
2
--0.6
7
1.0
3
8
--0.7
5
2
7
3
9
--0.8
10
V DS =10V
V DD =15V
V GS =10V
5 7
10
--0.9
IT13727
IT13729
IT15732
IT14855
10
[Nch]
[Nch]
11
[Nch]
[Pch]
2
--1.0
12
2
ECH8661
3
1000
0.01
0.01
100
100
1.0
0.1
1.0
0.1
10
10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0.01
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0.3
0
0
V DS = --10V
Ta=25° C
Single pulse
When mounted on ceramic substrate
(900mm
Operation in this
area is limited by R DS (on).
2 3
--0.5
0.4
5
2
×0.8mm) 1unit
Ciss, Coss, Crss -- V DS
5 7
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
Gate-to-Source Voltage, V GS -- V
--1.0
0.1
0.5
10
--1.5
2
I D -- V GS
I S -- V SD
3
0.6
A S O
5 7
Ciss
--2.0
15
1.0
0.7
--2.5
2
20
3
0.8
--3.0
5 7
10
No. A1777-4/6
25
V GS =0V
0.9
f=1MHz
--3.5
2 3
IT13728
IT13730
IT15731
IT14856
[Nch]
[Nch]
[Nch]
[Pch]
--4.0
1.0
30
5