EMH2407-TL-H ON Semiconductor, EMH2407-TL-H Datasheet

EMH2407-TL-H

Manufacturer Part Number

EMH2407-TL-H

Description

MOSFET N-CH DUAL 20V 6A EMH8

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.EMH2407-TL-H.pdf (4 pages)

Specifications of EMH2407-TL-H

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

25 mOhm @ 3A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

Gate Charge (qg) @ Vgs

6.3nC @ 4.5V

Input Capacitance (ciss) @ Vds

580pF @ 10V

Power - Max

1.4W

Mounting Type

Package / Case

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

EMH2407-TL-H

Manufacturer:

MITSUMI

Quantity:

766

Current page: 1 of 4
Download datasheet (95Kb)

Ordering number : ENA1141B

EMH2407

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : LG

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

•

Low ON-resistance.

Best suited for LiB charging and discharging switch.

Common-drain type.

2.5V drive.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

V (BR)DSS

V GS (off)

Symbol

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V GSS

V DSS

I GSS

⏐ yfs ⏐

I DSS

Tstg

I DP

Tch

P D

P T

I D

www.semiconductor-sanyo.com/network

SANYO Semiconductors

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm

I D =1mA, V GS =0V

V DS =20V, V GS =0V

V GS =±8V, V DS =0V

V DS =10V, I D =1mA

V DS =10V, I D =3A

EMH2407

90308 TI IM / 80608 TI IM / 31908PE TI IM TC-00001276

Conditions

✕0.8mm) 1unit

✕0.8mm)

DATA SHEET

min

0.5

Ratings

typ

Ratings

Continued on next page.

--55 to +150

max

±12

150

1.3

1.4

±10

1.3

No. A1141-1/4

Unit

μA

°C

Related parts for EMH2407-TL-H

EMH2407-TL-H Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. EMH2407 SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...

Page 2

... Switching Time Test Circuit V DD =10V =3.33Ω D PW=10μs D.C.≤ EMH2407 P.G 50Ω =2kΩ EMH2407 Symbol Conditions R DS (on =3A =4. (on =3A = (on =1.5A =2.5V Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz t d (on) See specified Test Circuit See specified Test Circuit ...

Page 3

... Drain-to-Source Voltage (on =1. Gate-to-Source Voltage fs⏐ ⏐ =10V 1 0 0.01 0.1 1.0 Drain Current Time -- 1000 (on 0.1 1.0 Drain Current EMH2407 =10V =1. 0.7 0.8 0.9 1.0 0 IT13201 60 Ta=25 ° --60 IT13203 0.2 10 IT13205 =10V 4.5 V 1000 100 ...

Page 4

... Ambient Temperature °C Note on usage : Since the EMH2407 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.ged objects.ged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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