EMH2604-TL-H ON Semiconductor, EMH2604-TL-H Datasheet

no-image

EMH2604-TL-H

Manufacturer Part Number
EMH2604-TL-H
Description
MOSFET N/P-CH 20V 4A EMH8
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of EMH2604-TL-H

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4A, 3A
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
4.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
345pF @ 10V
Power - Max
1.2W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Ordering number : EN9006
EMH2604
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7045-002
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Nch + Pch MOSFET
ON-resistance Nch : R DS (on)1=34m Ω (typ.)
1.8V drive
Halogen free compliance
1
8
0.5
0.2
2.0
Parameter
4
5
Pch : R DS (on)1=65m Ω (typ.)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : EMH8
0.125
V DSS
V GSS
I D
I DP
P D
P T
Tch
Tstg
Symbol
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
When mounted on ceramic substrate (900mm
EMH2604
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
8
1
TL
7
2
2
×0.8mm) 1unit
2
×0.8mm)
6
3
DATA SHEET
60111PE TKIM TC-00002607
5
4
N-channel
: EMH8
: -
Marking
--55 to +150
±10
20
20
4
150
1.0
1.2
FD
LOT No.
P-channel
--20
±10
--20
--3
No.9006-1/6
Unit
°C
°C
W
W
A
A
V
V

Related parts for EMH2604-TL-H

EMH2604-TL-H Summary of contents

Page 1

... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : EMH8 EMH2604 SANYO Semiconductors N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm P T When mounted on ceramic substrate (900mm ...

Page 2

... Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage EMH2604 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =20V =0V I GSS V GS =±8V = (off) ...

Page 3

... V GS =1.2V 0.5 0 0.6 0.7 0.8 0.9 1.0 IT13499 [Nch] 110 Ta=25°C 100 --60 --40 --20 IT13501 --10V --1. =6.67Ω OUT G EMH2604 50Ω =10V 0 0.5 1.0 1.5 Gate-to-Source Voltage (on 100 Ambient Temperature ° C [Nch] 2.0 IT13500 [Nch] 120 140 160 IT13502 No.9006-3/6 ...

Page 4

... Total Gate Charge --3.0 --2.5 --2.0 --1.5 --1.0 --0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage EMH2604 [Nch 0.1 IT13503 [Nch] 1000 V DD =10V =4. 100 ...

Page 5

... Drain Current --4 --10V --3A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 0.5 1.0 1.5 2.0 2.5 3.0 Total Gate Charge EMH2604 [Pch] 240 Ta=25°C 220 200 180 160 140 120 100 --6 --7 --8 --60 --40 --20 IT14535 [Pch --10V --1 ...

Page 6

... Ambient Temperature °C Note on usage : Since the EMH2604 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...

Related keywords