ECH8653-TL-H ON Semiconductor, ECH8653-TL-H Datasheet - Page 3

• Manufacturer Part Number: ECH8653-TL-H
• Description: MOSFET N-CH DUAL 20V 7.5A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8653-TL-H

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 4A, 8V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 18.5nC @ 8V
• Input Capacitance (ciss) @ Vds: 1280pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1000
100
1.0
0.1
1.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
10
80
70
60
50
40
30
20
10
0.01
0.01
0
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
V DS =10V
2
2
3
3
0.1
Drain-to-Source Voltage, V DS -- V
2
Gate-to-Source Voltage, V GS -- V
5 7
5 7
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
0.1
0.1
SW Time -- I D

I D -- V DS
0.2
4
y
2
2
fs -- I D
3
3
5 7
5 7
0.3
6
1.0
1.0
2
2
2
V GS =2.0V
0.4
8
V DD =10V
V GS = 8 V
3
3
Ta=25 ° C
I D =4A
IT12471
IT12473
IT12475
IT12477
5 7
5 7
ECH8653
0.5
10
10
10
1000
0.01
100
1.0
0.1
10
10
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
--60
0.2
0
0
V DS =10V
--40
2
0.5
--20
0.4
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
4
Diode Forward Voltage, V SD -- V
Ambient Temperature, Ta -- °C
0
6
1.0
R DS (on) -- Ta
20
I D -- V GS
I S -- V SD
0.6
8
40
Ciss
1.5
10
60
0.8
12
80
2.0
14
100
No. A0851-3/4
1.0
16
120
2.5
V GS =0V
f=1MHz
140
18
IT12472
IT12474
IT12476
IT12478
160
3.0
1.2
20