MCH6613-TL-E ON Semiconductor, MCH6613-TL-E Datasheet

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MCH6613-TL-E

Manufacturer Part Number
MCH6613-TL-E
Description
MOSFET N/P-CH 30V 350MA MCPH6
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of MCH6613-TL-E

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.7 Ohm @ 80mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
350mA, 200mA
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
1.58nC @ 10V
Input Capacitance (ciss) @ Vds
7pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SMD, No Lead
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCH6613-TL-E
Manufacturer:
ON Semiconductor
Quantity:
2 300
Part Number:
MCH6613-TL-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : EN6920A
MCH6613
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : FM
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low
ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.
Excellent ON-resistance characteristic.
1.5V drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
I D
SANYO Semiconductors
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS = 8V, V DS =0V
V DS =10V, I D =100 A
V DS =10V, I D =80mA
I D =80mA, V GS =4V
I D =40mA, V GS =2.5V
I D =10mA, V GS =1.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
MCH6613
70306 / 52506PE MS IM TB-00002278 / 52101 TS IM TA-3241
Conditions
Conditions
2
0.8mm)1unit
DATA SHEET
N-channel
min
150
0.4
30
0.35
--55 to +150
1.4
30
10
Ratings
150
0.8
typ
220
2.9
3.7
6.4
7.0
5.9
2.3
P-channel
Continued on next page.
max
--0.2
--0.8
- -30
12.8
10
1.3
3.7
5.2
10
1
No.6920-1/7
Unit
Unit
mS
pF
pF
pF
W
V
V
A
A
V
V
C
C
A
A

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MCH6613-TL-E Summary of contents

Page 1

... Ordering number : EN6920A MCH6613 Features The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low • ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting. Excellent ON-resistance characteristic. • 1.5V drive. • Specifications Absolute Maximum Ratings at Ta=25 C ...

Page 2

... Source1 2 : Gate1 3 : Drain2 Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 MCH6613 Symbol Conditions t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit =10V =10V =150mA Qgs V DS =10V =10V =150mA Qgd V DS =10V =10V =150mA ...

Page 3

... IT00030 [Nch] Ta= IT00031 --15V --50mA R L =300 D V OUT MCH6613 --3. --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Drain-to-Source Voltage --10V 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage (on ...

Page 4

... 0.01 0.1 Drain Current (on Ta 0.01 0.1 Drain Current (on 100 Ta 0.001 0.01 Drain Current (on --60 --40 -- Ambient Temperature MCH6613 [Nch] 100 --0.01 IT00032 [Nch] 100 V GS =2. 1 --0.01 IT00033 [Nch] 1000 V GS =1. 100 --0.0001 IT00034 [Nch 100 120 140 ...

Page 5

... Diode Forward Voltage Time -- I D 1000 100 (on 0.01 Drain Current Ciss, Coss, Crss -- V DS 100 Ciss 7 5 Coss 3 2 Crss 1 Drain-to-Source Voltage MCH6613 [Nch] 1 =10V 0 0. --0.01 IT00036 [Nch = --0 --0.01 1.0 1.1 1.2 --0.5 IT00037 [Nch] 1000 V DD =15V = 100 7 5 ...

Page 6

... R DS (on Ta= Single pulse 2 Mounted on a ceramic board (900mm 0.8mm)1unit 0. 1.0 10 Drain-to-Source Voltage 1.0 0.8 0.6 0.4 0 100 Ambient Temperature MCH6613 [Nch] -- --10V -- --100mA --8 --7 --6 --5 --4 --3 --2 -- 0.2 1.2 1.4 1.6 IT00040 [Nch] --1 --0. --0.2A 2 --0.1 7 Operation in this 5 area is limited (on) ...

Page 7

... Note on usage : Since the MCH6613 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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