MCH6604-TL-E ON Semiconductor, MCH6604-TL-E Datasheet
MCH6604-TL-E
Specifications of MCH6604-TL-E
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MCH6604-TL-E Summary of contents
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... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN MCH6604 SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...
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... V DD =25V =50mA =500 0V V OUT PW= P.G 50 MCH6604 S MCH6604 Symbol Conditions t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit =10V =10V =100mA Qgs V DS =10V =10V =100mA Qgd V DS =10V =10V =100mA ...
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... R DS (on =30mA 50mA Gate-to-Source Voltage (on 100 Ta 0.01 0.1 Drain Current (on --60 --40 -- Ambient Temperature MCH6604 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.8 1.0 0 IT00054 100 Ta= 1 0.01 IT00056 100 V GS =2. 1 0.001 IT00058 1 0 0.01 100 120 ...
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... Crss 1 Drain-to-Source Voltage =1A 1 =0.25A 3 2 0.1 Operation in this 7 area is limited (on Ta= Single pulse 2 Mounted on a ceramic board (900mm 0.8mm) 1unit 0. 1.0 10 Drain-to-Source Voltage MCH6604 1000 100 1.0 1.1 1.2 0.01 IT00062 10 f=1MHz V DS =10V I D =100mA IT00064 1 100 s 0.8 ...
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... Note on usage : Since the MCH6604 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...