ECH8657-TL-H ON Semiconductor, ECH8657-TL-H Datasheet

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ECH8657-TL-H

Manufacturer Part Number
ECH8657-TL-H
Description
MOSFET N-CH DUAL 35V 4.5A ECH8
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of ECH8657-TL-H

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
59 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
4.5nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 20V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SMD
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ECH8657-TL-H
Manufacturer:
ON Semiconductor
Quantity:
2 400
Ordering number : ENA1710A
ECH8657
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7011A-001
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
4V drive
Halogen free compliance
1
Parameter
8
0.65
Bot t om View
Top View
2.9
5
4
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
0.15
V DSS
V GSS
I D
I DP
P D
P T
Tch
Tstg
Symbol
0 t o 0.02
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
When mounted on ceramic substrate (1200mm
ECH8657
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
Conditions
8
1
TL
7
2
D2210 TKIM/42810PE TKIM TC-00002338
6
3
2
×0.8mm) 1unit
5
4
2
×0.8mm)
DATA SHEET
: ECH8
: -
Marking
Ratings
--55 to +150
TC
Lot No.
±20
150
4.5
1.3
1.5
35
30
No. A1710-1/4
Unit
°C
°C
W
W
A
A
V
V

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ECH8657-TL-H Summary of contents

Page 1

... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bot t om View ECH8657 SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ When mounted on ceramic substrate (1200mm P T When mounted on ceramic substrate (1200mm ...

Page 2

... 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 Drain-to-Source Voltage ECH8657 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =35V =0V I GSS V GS =±16V = (off =10V =1mA | yfs | V DS =10V = (on =2A =10V R DS (on =1A =4. (on =1A =4V ...

Page 3

... Gate-to-Source Voltage 1 0 0.01 0.1 1.0 Drain Current Time -- =15V =10V 1 0.1 1.0 Drain Current =10V =4. Total Gate Charge ECH8657 200 Ta=25°C 160 120 --60 --40 --20 IT16223 =10V 0.2 IT14214 100 (on IT14216 1 Operation in this 3 area is limited (on). 2 0.1 7 Ta=25° C ...

Page 4

... Ambient Temperature °C Note on usage : Since the ECH8657 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...

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