MCH6601-TL-E ON Semiconductor, MCH6601-TL-E Datasheet
MCH6601-TL-E
Specifications of MCH6601-TL-E
Related parts for MCH6601-TL-E
MCH6601-TL-E Summary of contents
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... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 42806 MS IM TB-00002289 / O3105PE MS IM TB-00001865 / N2499 TS IM TA-2457 MCH6601 SANYO Semiconductors P-Channel Silicon MOSFET General-Purpose Switching Device ...
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... See specified Test Circuit See specified Test Circuit =--10V -10V =--100mA Qgs V DS =--10V -10V =--100mA Qgd V DS =--10V -10V =--100mA =--100mA =0V Electrical Connection OUT MCH6601 --0.20 --0.18 --0.16 --0.14 --2.0V --0.12 --0.10 --0.08 --0. --1.5V --0.04 --0.02 0 --1.4 --1.6 --1 ...
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... Gate-to-Source Voltage (on 100 Ta --0.01 --0.1 Drain Current (on --60 --40 -- Ambient Temperature --0 --0.01 --0.5 --0.6 --0.7 --0.8 --0.9 Diode Forward Voltage MCH6601 100 Ta= 1.0 --7 --8 --9 --10 --0.01 IT00079 1000 --2. 100 --0.0001 IT00081 1 0 0.01 100 120 140 160 --0.01 IT00083 1000 ...
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... Drain-to-Source Voltage Note on usage : Since the MCH6601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...