QS8K2TR Rohm Semiconductor, QS8K2TR Datasheet
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Manufacturer Part Number
QS8K2TR
Description
MOSFET 2N-CH 30V 3.5A TSMT8
Manufacturer
Rohm Semiconductor
Specifications of QS8K2TR
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
54 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
4.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
285pF @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
TSMT8
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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Silicon N-channel MOSFET
1) Low On-resistance.
2) High power package.
3) 2.5V drive.
Switching
QS8K2
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Channel to Ambient
* Mounted on a ceramic board.
QS8K2
2.5V Drive Nch MOSFET
Structure
Features
Application
Packaging specifications
Absolute maximum ratings (Ta = 25C)
Thermal resistance
Type
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Rth (ch-a)
Symbol
Symbol
Taping
3000
V
V
Tstg
Tch
TR
I
P
I
DSS
GSS
I
DP
I
sp
D
s
D
*1
*1
*2
*
55 to +150
Limits
Limits
1.25
83.3
3.5
150
100
12
12
1.5
30
12
1
1/5
°C / W /ELEMENT
°C / W /TOTAL
W / ELEMENT
W / TOTAL
Unit
Unit
C
C
V
V
A
A
A
A
Dimensions (Unit : mm)
Inner circuit
TSMT8
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Abbreviated symbol : K02
(8) (7)
(1) (2)
∗2
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(8)
(1)
(6)
(3)
∗1
(7)
(5)
(4)
(2)
∗2
(6)
(3)
2010.09 - Rev.A
∗1
(5)
(4)
Related parts for QS8K2TR
QS8K2TR Summary of contents
Drive Nch MOSFET QS8K2 Structure Silicon N-channel MOSFET Features 1) Low On-resistance. 2) High power package. 3) 2.5V drive. Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) QS8K2 Absolute maximum ratings (Ta ...
QS8K2 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage V Static drain-source on-state R resistance Forward transfer ...
QS8K2 Electrical characteristic curves 3.5 Ta=25°C Pulsed 10V 4. 2. 1.5V ...
QS8K2 150 Ta=25°C Pulsed I = 3.5A D 100 I = 1.75A GATE-SOURCE VOLTAGE : V [V] GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 C iss 100 C rss C oss ...
QS8K2 Measurement circuits D.U. Fig.1-1 Switching time measurement circuit D.U.T. I G(Const Fig.2-1 Gate charge measurement circuit www.rohm.com ©2010 ...
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...
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