DMG1026UV-7 Diodes Inc, DMG1026UV-7 Datasheet - Page 4

• Manufacturer Part Number: DMG1026UV-7
• Description: MOSFET DL N-CH 60V 440MA SOT-563
• Manufacturer: Diodes Inc
• Series: -r

Specifications of DMG1026UV-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 440mA
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 0.21nC @ 10V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 580mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMG1026UV-7DITR

DMG1026UV
Document number: DS35068 Rev. 4 - 2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
10
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
10
8
6
4
2
0
-50 -25
1
0
0
V
I =
D
DS
5
800m
T , AMBIENT TEMPERATURE (°C)
= 15V
0.2
V , DRAIN-SOURCE VOLTAGE (V)
A
DS
I = 250µA
D
Q
Fig. 9 Typical Total Capacitance
A
0
C
g
C
10
, TOTAL GATE CHARGE
rss
oss
0.4
Fig. 11 Gate Charge
25
C
15
iss
50
0.6
I = 1mA
D
20
75
25
0.8
100
30
f = 1MHz
(nC)
1.0
125 150
35
1.2
40
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10,000
1,000
0.001
1,000
100
0.01
800
600
400
200
10
0.1
10
1
1
0
0.1
0
0
5
Fig. 8 Diode Forward Voltage vs. Current
V , DRAIN-SOURCE VOLTAGE (V)
V
0.2
V , SOURCE-DRAIN VOLTAGE (V)
DS
Fig. 12 SOA, Safe Operation Area
DS
SD
10
Fig. 10 Typical Leakage Current
, DRAIN-SOURCE VOLTAGE (V)
vs. Drain-Source Voltage
15
R
Limited
0.4
DS(on)
1
DC
P
W
20
= 10s
P
W
P
0.6
= 1s
W
25
= 100ms
P
W
T = 25°C
A
= 10ms
30
P
W
P
10
0.8
W
= 1ms
P
= 100µs
DMG1026UV
W
T = 150°C
T = 125°C
T = 25°C
35
T = 85°C
A
A
A
A
= 10 s
µ
1.0
40
© Diodes Incorporated
February 2012
45 50
100
1.2