IXYB82N120C3H1 IXYS, IXYB82N120C3H1 Datasheet

IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack

IXYB82N120C3H1

Manufacturer Part Number
IXYB82N120C3H1
Description
IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
Manufacturer
IXYS
Datasheet

Specifications of IXYB82N120C3H1

Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
160 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
1040 W
Package / Case
PLUS-264
Mounting Style
Through Hole
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
160
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
82
Vce(sat), Typ, Tj = 25°c, Igbt (v)
3.2
Tfi, Typ, Tj = 25°c, Igbt, (ns)
93
Eoff, Typ, Tj = 125°c, Igbt (mj)
3.70
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.12
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
42
Rthjc, Max, Diode (k/w)
0.35
Package Style
PLUS264
Lead Free Status / Rohs Status
 Details
1200V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
F
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
C
GE
CE
CE
w/ Diode
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 82A, V
= 250μA, V
TM
CES
, V
IGBT
GE
VJ
GE
GE
= ±20V
= 125°C, R
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
GE
GE
= 1MΩ
G
= 2Ω
T
T
J
J
= 125°C
= 125°C
IXYB82N120C3H1
1200
30..120 / 6.7..27
Min.
Characteristic Values
3.0
@V
-55 ... +150
-55 ... +150
Maximum Ratings
I
CE
CM
Typ.
2.75
3.50
= 164
1040
1200
1200
160
800
±20
±30
320
V
150
300
260
82
42
41
CES
10
±100
3.20
Max.
5.0
50
3 mA
N/lb.
mJ
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
A
V
V
V
g
V
I
V
t
PLUS264
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
Positive Thermal Coefficient of
Avalanche Rated
High Current Handling Capability
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
C
E
TM
= 1200V
= 82A
= 93ns
≤ ≤ ≤ ≤ ≤ 3.2V
C
Tab = Collector
Tab
= Collector
DS100355C(10/11)

Related parts for IXYB82N120C3H1

IXYB82N120C3H1 Summary of contents

Page 1

... V GE(th CES CE CES GE = ±20V 0V, V GES 82A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved IXYB82N120C3H1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 160 82 42 320 41 800 = 2Ω 164 G CM ≤ CES 1040 -55 ... +150 150 -55 ... +150 300 260 30 ...

Page 2

... Characteristic Values Min. Typ 125°C 1 125°C J 420 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYB82N120C3H1 PLUS264 (IXYB) Outline TM Max 280 0.12 °C/W °C/W Max. 2 0.35 °C ...

Page 3

... J = 15V GE 13V 11V 10V 3.5 4 4.5 5 5.5 6 6.5 160 T = 25ºC J 140 120 100 IXYB82N120C3H1 Fig. 2. Extended Output Characteristics @ 15V 11V GE 13V 10V 12V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 2 164A 1.8 C 1.6 1 1.2 1.0 ...

Page 4

... C ies 140 120 100 C oes res 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXYB82N120C3H1 Fig. 8. Gate Charge V = 600V 82A 10mA 100 120 140 160 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC J ...

Page 5

... 15V 600V CE 220 160 210 120 T = 125ºC J 200 190 180 170 80 90 100 IXYB82N120C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V 125º 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. ...

Page 6

... T - Degrees Centigrade J IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 140 60 55 120 50 100 80A 40A 100 125 IXYB82N120C3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 600V 125º Amperes 25º 100 IXYS REF: IXY_82N120C3(8M)05-10-11 ...

Page 7

... Fig. 21. Fig. 23. Fig. 25. © 2011 IXYS CORPORATION, All Rights Reserved IXYB82N120C3H1 Fig. 22. Fig. 24. Fig. 26. transient thermal impedance ...

Related keywords