VRF151G MICROSEMI, VRF151G Datasheet
VRF151G
Specifications of VRF151G
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VRF151G Summary of contents
Page 1
... RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband perfor- mance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. FEATURES • Improved Ruggedness V = 170V (BR)DSS • ...
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... Typ Max Degradation in Output Power 250μs PULSE TEST<0.5 % DUTY CYCLE T = -55° 25° 125° GATE-TO-SOURCE VOLTAGE (V) GS FIGURE 2, Transfer Characteristics I DMax R ds(on) PD Max = T 125° 75° 100 250 V , DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 4, Forward Safe Operating Area VRF151G Unit pF Unit dB % ...
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... Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration SINGLE PULSE RECTANGULAR PULSE DURATION (seconds) 400 175MHz Vdd=50V, Idq = 250mA, Freq=150MHz 350 150MHz 300 200MHz 250 200 150 100 INPUT POWER (WATTS PEP) Figure 6. P versus P OUT IN VRF151G Note Pulse Duration Duty Factor Peak θ 1 ...
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... The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. VRF151G ...