STM8L151C3T6 STMicroelectronics, STM8L151C3T6 Datasheet - Page 65

• Manufacturer Part Number: STM8L151C3T6
• Description: IC MCU 8BIT 8KB FLASH 48LQFP
• Manufacturer: STMicroelectronics
• Series: STM8L EnergyLiter

Specifications of STM8L151C3T6

• Core Processor: STM8
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, IrDA, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, IR, POR, PWM, WDT
• Number Of I /o: 40
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 28x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11492

STM8L151x2, STM8L151x3
Table 24.
1. All pins except PA0, PB0 and PB4 are floating under reset. PA0, PB0 and PB4 are configured with pull-up under reset.
7.3.4
Table 26.
1. Data guaranteed by Design, not tested in production.
2. Data based on characterization results, not tested in production.
Symbol
I
DD(RST)
I
V
LEAK_LSE
Symbol
V
f
C
LSE_ext
LSEH
LSEL
in(LSE)
(2)
(2)
Current consumption under external reset
Clock and timing characteristics
HSE external clock (HSEBYP = 1 in CLK_ECKCR)
Subject to general operating conditions for V
Table 25.
1. Data guaranteed by Design, not tested in production.
LSE external clock (LSEBYP=1 in CLK_ECKCR)
Subject to general operating conditions for V
LSE external clock characteristics
I
Supply current under
external reset
LEAK_HSE
Symbol
C
f
HSE_ext
V
V
in(HSE)
HSEH
HSEL
External clock source frequency
OSC32_IN input pin high level voltage
OSC32_IN input pin low level voltage
OSC32_IN input capacitance
OSC32_IN input leakage current
Parameter
External clock source
frequency
OSC_IN input pin high level
voltage
OSC_IN input pin low level
voltage
OSC_IN input
capacitance
OSC_IN input leakage
current
HSE external clock characteristics
(1)
Parameter
Parameter
(1)
(1)
All pins are externally
tied to V
Doc ID 018780 Rev 2
(1)
(1)
DD
V
SS
Conditions
< V
Conditions
DD
DD
IN
< V
and T
and T
0.7 x V
DD
Min
V
SS
A
A
V
V
.
.
V
0.7 x V
DD
DD
DD
DD
Min
V
= 1.8 V
= 3.6 V
1
SS
= 3 V
DD
32.768
Typ
0.6
Typ
2.6
Electrical parameters
0.3 x V
Typ
48
76
91
Max
V
0.3 x V
±1
DD
Max
V
±1
16
DD
DD
DD
Unit
Unit
kHz
µA
pF
µA
65/110
V
MHz
Unit
pF
µA
V