MX1N6627 MICROSEMI, MX1N6627 Datasheet

MX1N6627

Manufacturer Part Number

MX1N6627

Description

Diode Switching 440V 1.75A 2-Pin Case E

Manufacturer

MICROSEMI

Type

Switching Dioder

Datasheet

1.MX1N6627.pdf (4 pages)

Specifications of MX1N6627

Package

2Case E

Peak Forward Voltage

1.5@4A V

Peak Average Forward Current

1.75 A

Peak Reverse Current

2 uA

Configuration

Single

Peak Non-repetitive Surge Current

75 A

Peak Reverse Recovery Time

45 ns

Peak Reverse Repetitive Voltage

440 V

Current page: 1 of 4
Download datasheet (251Kb)

10-01-2009 REV F; SA7-57.pdf

IMPORTANT: For the most current data, consult MICROSEMI’s website:

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/590 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in surface mount MELF package configurations by adding a “US”

suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also

offers numerous other rectifier products to meet higher and lower current ratings

with various recovery time speed requirements including standard, fast and ultrafast

device types in both through-hole and surface mount packages.

•

Popular JEDEC registered 1N6626 to 1N6631 series

Voidless hermetically sealed glass package

Extremely robust construction

Triple-layer passivation

Internal “Category I” Metallurgical bonds

JAN, JANTX, and JANTXV available per MIL-PRF-

Further options for screening in accordance with MIL-

Surface mount equivalents also available in a square end-

Junction Temperature: -65

Storage Temperature: -65

Peak Forward Surge Current @ 25

Average Rectified Forward Current (I

Thermal Resistance L= 0.375 inch (R

Capacitance at V

Solder temperature: 260

19500/590

PRF-19500 for JANS by using a “SP” prefix, e.g. SP6626,

SP6629, etc.

cap MELF configuration with “US” suffix (see separate

data sheet for 1N6626US thru 1N6631US)

1N6631 which is 60A)

Note: Test pulse = 8.3ms, half-sine wave.

(L=.375 inch from body):

(Derate I

rating is typical for PC boards where thermal resistance

from mounting point to ambient is sufficiently controlled

where T

1N6626 thru 1N6628

1N6629 thru 1N6631

(Derate I

1N6626 thru 1N6628

1N6629 thru 1N6631

J(max)

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

linearly at 0.80%/

MAXIMUM RATINGS

is not exceeded. See MIL-PRF-19500/590)

S C O T T S D A L E D I V I S I O N

linearly at 1.0%/

= 10 V: 40 pF

FEATURES

C for 10 s (maximum)

C to +175

DESCRIPTION

C to +150

C for T

2.3 A

1.8 A

1.75 A

1.40 A

C for T

C: 75A (except

θ JL

>+25

) at T

> +75

): 22

C. This I

= +75

=25

Scottsdale Division

C/W

Microsemi

http://www.microsemi.com

VOIDLESS-HERMETICALLY-SEALED

ULTRA FAST RECOVERY GLASS

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

TERMINATIONS: Axial-leads are Tin/Lead

(Sn/Pb) over Copper.

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 750 mg

See package dimensions on last page

Ultrafast recovery rectifier series 200 to 1000 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance

Controlled avalanche with peak reverse power

capability

Inherently radiation hard

MicroNote 050

MECHANICAL AND PACKAGING

1N6626 thru 1N6631

APPLICATIONS / BENEFITS

RECTIFIERS

APPEARANCE

as described in Microsemi

“E” Package

Page 1

Related parts for MX1N6627

MX1N6627 Summary of contents

Page 1

... I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages ...

Page 2

... I =1.0A R(REC 100 A/μs MIL-STD-750, Method 4031, F SYMBOLS & DEFINITIONS Definition CHARTS AND GRAPHS Microsemi Scottsdale Division 1N6626 thru 1N6631 RECTIFIERS MAXIMUM MAXIMUM PEAK REVERSE REVERSE RECOVERY RECOVERY RECOVERY RECOVERY CURRENT TIME (LOW TIME (HIGH ...

Page 3

... REV F; SA7-57.pdf 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS Typical Reverse Current vs. Reverse Pulse Power vs. Microsemi Scottsdale Division FIGURE 4 Applied Reverse Voltage 10ms FIGURE 6 Pulse Duration Page 3 ...

Page 4

... Copyright © 2009 10-01-2009 REV F; SA7-57.pdf 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS PACKAGE DIMENSIONS Lead Tolerance = + .002 -.003 in Microsemi Scottsdale Division Page 4 ...

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