PH3135-65M M/A-Com Technology Solutions, PH3135-65M Datasheet - Page 2

• Manufacturer Part Number: PH3135-65M
• Description: Trans GP BJT NPN 65V 2-Pin Hermetic Metal
• Manufacturer: M/A-Com Technology Solutions
• Type: NPNr

Specifications of PH3135-65M

• Maximum Collector Emitter Voltage: 65 V
• Maximum Emitter Base Voltage: 3 V

2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical RF Performance
Gain vs. Frequency
PH3135-65M
Radar Pulsed Power Transistor
65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
RF Test Fixture Impedance
(GHz)
Freq.
3.1
3.3
3.5
F (GHz)
9.5
9.0
8.5
8.0
7.5
3.1
3.3
3.5
3.1
Pin
(W)
8.0
8.3
9.8
3.2
8.9 - j11.2
8.7 - j8.6
8.6 - j6.0
Z
IF
(Ω)
Pout
Fre q (GHz)
(W)
65
65
65
3.3
5.2 - j11.0
Gain
(dB)
9.09
8.95
8.23
4.2 - j8.8
4.7 - j7.0
Z
3.4
OF
(Ω)
4.35
4.24
4.64
(A)
3.5
Ic
41.5
42.6
38.9
(%)
Eff
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Collector Efficiency vs. Frequency
• North America Tel: [phone] / Fax: [phone]
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.
50
45
40
35
30
3.1
-10.5
-17.3
(dB)
-9.8
RL
3.2
VSWR-T
(2:1)
P
P
P
Fre q (GHz)
M/A-COM Products
Released, 10 Aug 07
3.3
3.4
3.5