PH1214-80M M/A-Com Technology Solutions, PH1214-80M Datasheet

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PH1214-80M

Manufacturer Part Number
PH1214-80M
Description
Trans GP BJT NPN 70V 2-Pin Hermetic Metal
Manufacturer
M/A-Com Technology Solutions
Type
NPNr
Datasheet
1.PH1214-80M.pdf (3 pages)

Specifications of PH1214-80M

Maximum Collector Emitter Voltage
70 V
Maximum Emitter Base Voltage
3 V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
PH1214-80M
Manufacturer:
M/A-COM
Quantity:
5 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
PH1214-80M
Manufacturer:
MA-COM
Quantity:
23
1
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Electrical Specifications: T
PH1214-80M
Absolute Maximum Ratings at 25°C
Radar Pulsed Power Transistor
80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
Collector-Emitter Breakdown Voltage I
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Parameter
Parameter
Symbol
V
V
P
T
T
CES
EBO
I
TOT
STG
C
J
V
Vcc = 40V, Pin = 13W
Vcc = 40V, Pin = 13W
Vcc = 40V, Pin = 13W
Vcc = 40V, Pin = 13W
Vcc = 40V, Pin = 13W
Vcc = 40V, Pin = 13W
Vcc = 40V, Pin = 13W
C
CE
= 35mA
C
Test Conditions
= 40V
= 25 ± 5°C (
-65 to +200
Rating
220
3.0
6.4
200
70
Room Ambient
Units
°C
°C
W
V
V
A
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
F = 1.2, 1.3, 1.4 GHz
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Frequency
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
Outline Drawing
)
Symbol
VSWR-T
VSWR-S
R
BV
P
I
TH(JC)
RL
G
η
CES
OUT
CES
C
P
M/A-COM Products
Released, 30 May 07
Min
7.9
70
80
50
-
-
-
-
-
Max
1.5:1
3.5
0.8
3:1
-9
-
-
-
-
Units
°C/W
mA
dB
dB
W
%
V
-
-

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PH1214-80M Summary of contents

Page 1

... PH1214-80M Radar Pulsed Power Transistor 80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • ...

Page 2

... PH1214-80M Radar Pulsed Power Transistor 80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Typical RF Performance Freq. Pin Pout (GHz) (W) (W) 1.2 13 106 1 1.4 13 102 Gain vs. Frequency 9.5 9.1 8.7 8.3 7.9 7.5 1.20 1.25 1.30 Fre q (GHz) RF Test Fixture Impedance F (GHz) Z (Ω ...

Page 3

... PH1214-80M Radar Pulsed Power Transistor 80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Test Fixture Circuit Dimensions Test Fixture Assembly 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. ...

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