SI9717CY Vishay, SI9717CY Datasheet - Page 3

Power Switch ICs - Power Distribution Battery Disc Sw

SI9717CY

Manufacturer Part Number
SI9717CY
Description
Power Switch ICs - Power Distribution Battery Disc Sw
Manufacturer
Vishay
Datasheet

Specifications of SI9717CY

On Resistance (max)
0.06 Ohms
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Package / Case
SOIC-16
Maximum Power Dissipation
2000 mW
Mounting Style
SMD/SMT
Lead Free Status / Rohs Status
In Transition

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9717CY
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Part Number:
SI9717CY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
Document Number: 70022
S-40745—Rev. G, 19-Apr-04
Switch 4
On Resistance
On-Resistance
Off Current
Off Current
Switching Time
Power Supply
+12 V
+12 V
V
V
Switch Control Inputs
Input Voltage High
Input Voltage High
Input Voltage Low
Input Voltage Low
Input Hysteresis
Input Hysteresis
Input Current High
Input Current Low
TIMING WAVEFORMS
S
GND
GND
L
L
1
Current
Current
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guaranteed by design, not subject to production testing.
or S
t
SX(on)
IN
IN
t
d(on)
2
g
Current
Current
Parameter
Parameter
10%
b
b
50%
V
FIGURE 1. t
PP
V
L
R
L
V
PP
90%
d(on)
and t
50%
Symbol
Symbol
V
V
I
I
t
+12VIN(1)
+12VIN(2)
I(H)
I(H)
ramp(on)
t
I
I
t
S4(off)
R
R
I
I
V
V
V
V
VL(1)
VL(2)
I
SX(on)
d(on)
I
C
OFF
OFF
I(H)
I(L)
I(H)
I(H)
ON
ON
I(L)
I(L)
−V
L
V
I(L)
I(L)
90%
t
SX(off)
I = 500 mA , +12 V
I = 500 mA , +12 V
+3.3 V
+3.3 V
+3.3 V
+12 V
+12 V
Unless Otherwise Specified
Unless Otherwise Specified
3 3 V
S
2
S
+5 V
+5 V
IN
IN
= S
S
S
S
S
S
1
IN
IN
IN
1
1
1
1
R
R
1
= 3.6 V, V
= 3.6 V, V
through S
S
3
= S
= S
= S
L
L
through S
Test Conditions
Test Conditions
= 3.3 V, C
= S
= 12 V, V
= 12 V, V
IN
IN
4
= S
= 100 W , See Figure 2
= 100 W , See Figure 2
3 3 V C
= V
4
4
4
= 5 V, +3.3 V
= 5 V, +3.3 V
4
4
= V
= GND, S
= V
= GND, S
t
d(on)
L
= GND
S
GND
GND
IN
IN
3
CC
CC
L
L
4
L
L
= 10.8 V
= 10.8 V
, S
, S
or S
4
L
= GND, V
= 5.0 V, GND = 0 V
= 5.0 V, GND = 0 V
= V
= 0 V
= 0 V
= 0.1 mF, S
2
2
0 1 F S
= S
= S
4
2
L
2
, V
IN
IN
= S
= S
3
3
= 3.3 V
= 3.3 V
L
= GND
= GND
3
L
3
= 5 V
= V
10%
= V
= 5 V
3
50%
= GND
L
L
V
V
GND
CC
L
V
V
V
V
V
V
T
T
T
T
L
L
L
L
L
L
A
A
A
A
R
FIGURE 2. t
= 3.3 V
= 5 V
= 3.3 V
= 5 V
= 3.3 V
= 5 V
L
V
= 25_C
= 70_C
= 25_C
= 70_C
CC
90%
t
ramp(on)
Min
−1.0
200
ramp(on)
0.5
2.8
4.0
0.5
0.8
50%
1
C Suffix, 0 to 70_C
a
Vishay Siliconix
C
L
Limits
Typ
2.4
3.3
1.1
1.5
1.3
1.8
90%
Max
150
185
0.4
0.8
1.0
10
10
10
10
10
t
1
4
SX(off)
www.vishay.com
Si9711
a
Unit
Unit
mW
mW
mA
mA
ms
m
mA
mA
mA
mA
V
V
3

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