SI2315DS-T1 Vishay, SI2315DS-T1 Datasheet - Page 3

• Manufacturer Part Number: SI2315DS-T1
• Description: MOSFET Small Signal 12V 3.5A 1.25W
• Manufacturer: Vishay

Specifications of SI2315DS-T1

• Configuration: Single
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72014
S-80642-Rev. E, 24-Mar-08
12
10
0.30
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0
5
4
3
2
1
0
0
0
V
V
I
1
D
GS
DS
On-Resistance vs. Drain Current
2
= 3.5 A
V
= 1.8 V
DS
= 6 V
2
V
Output Characteristics
- Drain-to-Source Voltage (V)
GS
Q
2
I
g
4
D
= 4.5 thru 2 V
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
4
3
6
6
4
8
V
V
GS
GS
= 2.5 V
= 4.5 V
8
10
5
1.5 V
12
10
6
1200
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
12
10
0
8
6
4
2
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
- 25
V
I
C
D
GS
rss
= 3.5 A
2
0.5
V
= 4.5 V
V
25 °C
DS
GS
T
Transfer Characteristics
T
0
J
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
= 125 °C
4
C
25
Capacitance
C
1.0
iss
oss
50
6
Vishay Siliconix
Si2315BDS
- 55 °C
1.5
75
8
www.vishay.com
100
2.0
10
125
150
2.5
12
3