SI4435BDY-T1 Vishay, SI4435BDY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4435BDY-T1
• Description: MOSFET Small Signal 30V 9.1A 1.5W
• Manufacturer: Vishay

Specifications of SI4435BDY-T1

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72123
S09-0767-Rev. D, 04-May-09
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
V
I
GS
D
Source-Drain Diode Forward Voltage
DS
= 9.1 A
0.2
= 4.5 V
On-Resistance vs. Drain Current
= 15 V
10
V
10
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
I
D
- Total Gate Charge (nC)
T
J
- Drain Current (A)
Gate Charge
20
= 150 °C
0.6
20
0.8
30
V
T
GS
J
1.0
= 25 °C
= 10 V
30
40
1.2
50
1.4
40
2400
1800
1200
0.10
0.08
0.06
0.04
0.02
0.00
600
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
- 25
D
GS
= 9.1 A
5
= 10 V
2
V
V
DS
GS
T
0
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
10
2 5
Capacitance
4
15
5 0
I
Vishay Siliconix
D
C
= 9.1 A
C
Si4435BDY
oss
iss
6
7 5
20
www.vishay.com
100
8
25
125
150
10
30
3