SI3443DV-T1 Vishay, SI3443DV-T1 Datasheet - Page 3

• Manufacturer Part Number: SI3443DV-T1
• Description: MOSFET Small Signal 20V 4.4A 2W
• Manufacturer: Vishay

Specifications of SI3443DV-T1

• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 71741
S-32559—Rev. E, 29-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
GS
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 4.5 A
= 2.5 V
On-Resistance vs. Drain Current
= 10 V
4
V
T
SD
Q
2
J
0.4
g
= 150_C
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
D
− Drain Current (A)
Gate Charge
8
0.6
4
0.8
12
T
J
V
1.0
V
= 25_C
GS
GS
6
= 4.5 V
16
= 2.7 V
1.2
1.4
20
8
1200
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
−25
D
GS
= 4.5 A
= 4.5 V
1
4
T
V
V
0
C
J
GS
DS
− Junction Temperature (_C)
oss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
2
8
Vishay Siliconix
50
I
D
= 4.5 A
C
12
3
iss
75
Si3443DV
100
16
www.vishay.com
4
125
150
20
5
3