SI4463DY-T1 Vishay, SI4463DY-T1 Datasheet

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... V = −4 −20 −20 0.020 @ V = −2 Ordering Information: Si4463DY-T1 Si4463DY-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction Maximum Power Dissipation ...

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... Si4463DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

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... Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Document Number: 71819 S-50694—Rev. C, 18-Apr- 4 100 T = 25_C J 0.8 1.0 1.2 Si4463DY Vishay Siliconix Capacitance 8000 6400 C iss 4800 3200 C oss 1600 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4 ...

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... Si4463DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 −3 ...

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