SST25VF040B-50-4C-QAF Microchip Technology, SST25VF040B-50-4C-QAF Datasheet - Page 27

• Manufacturer Part Number: SST25VF040B-50-4C-QAF
• Description: Flash 512K X 8 14 us
• Manufacturer: Microchip Technology

Specifications of SST25VF040B-50-4C-QAF

• Memory Type: NAND
• Memory Size: 4 Mbit
• Architecture: Sectored
• Interface Type: SPI
• Access Time: 50 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 15 mA
• Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Package / Case: WSON-8
• Organization: 32 KB
• Lead Free Status / Rohs Status: Details

A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Power-Up Specifications
All functionalities and DC specifications are specified for a V
ms (0v - 3.0V in less than 300 ms). See Table 17 and Figure 25 for more information.
Table 17:Recommended System Power-up Timings
Figure 25:Power-up Timing Diagram
Symbol
T
T
PU-READ
PU-WRITE
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
V
V
DD
DD
V
Max
Min
DD
Parameter
V
V
DD
DD
Commands may not be accepted or properly
Min to Read Operation
Min to Write Operation
Chip selection is not allowed.
interpreted by the device.
27
T
T
PU-READ
PU-WRITE
4 Mbit SPI Serial Flash
DD
Device fully accessible
ramp rate of greater than 1V per 100
SST25VF040B
Minimum
100
100
1295 PwrUp.0
S71295-06-000
Time
Data Sheet
02/11
Units
µs
µs
T17.0 1