SI4888DY Vishay, SI4888DY Datasheet - Page 4

• Manufacturer Part Number: SI4888DY
• Description: MOSFET Small Signal 30V 16A 3.5W
• Manufacturer: Vishay

Specifications of SI4888DY

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si4888DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71336.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
- 4
- 4
- 25
0.05
Duty Cycle = 0.5
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.02
0.2
Single Pulse
I
D
0
= 250 µA
Threshold Voltage
T
J
25
- Temperature (°C)
10
Single Pulse
- 3
50
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
- 2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
- 2
10
- 1
100
10
80
60
40
20
1
0
0.001
- 1
0.01
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
Time (s)
T
t
1
1
A
S09-0221-Rev. F, 09-Feb-09
0.1
= P
t
2
Document Number: 71336
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 68 °C/W
1
600
10
10