2SK302-Y (TE85L,F) Toshiba, 2SK302-Y (TE85L,F) Datasheet
2SK302-Y (TE85L,F)
Manufacturer Part Number
2SK302-Y (TE85L,F)
Description
Manufacturer
Toshiba
Datasheet
1.2SK302-Y_TE85LF.pdf
(7 pages)
Specifications of 2SK302-Y (TE85L,F)
Application
VHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.03A
Drain Source Voltage (max)
20V
Power Gain (typ)@vds
28@10VdB
Noise Figure (max)
3dB
Package Type
SMini
Pin Count
3
Forward Transconductance (typ)
0.01S
Input Capacitance (typ)@vds
3@10VpF
Reverse Capacitance (typ)
0.035@10VpF
Operating Temp Range
-55C to 125C
Mounting
Surface Mount
Mode Of Operation
FM
Number Of Elements
1
Power Dissipation (max)
150mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
FM Tuner, VHF RF Amplifier Applications
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Low reverse transfer capacitance: C
Low noise figure: NF = 1.7dB (typ.)
High power gain: G
Recommend operation voltage: 5~15 V
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
Note: Using continuously under heavy loads (e.g. the application of high
Gate leakage current
Drain-source voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Note: I
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
DSS
Characteristics
Characteristics
classification O: 1.5~3.5 mA, Y: 3.0~7.0 mA, GR: 6.0~14.0 mA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
ps
= 28dB (typ.)
(Ta = 25°C)
(Ta = 25°C)
V
rss
Symbol
Symbol
GS (OFF)
V
⎪Y
I
I
V
V
C
G
T
C
GSS
T
DSS
P
NF
DSX
= 0.035 pF (typ.)
I
GS
DS
stg
rss
D
ch
iss
PS
fs
D
(Note)
⎪
2SK302
V
V
V
V
V
V
V
f = 100 MHz (Figure 1)
DS
GS
DS
DS
DS
DS
DS
−55~125
Rating
= 0 V, V
= 10 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= −4 V, I
150
125
20
±5
30
1
Test Condition
GS
D
D
GS
GS
GS
GS
= 100 μA
= 100 μA
= ±5 V
= 0 V
= 0 V, f = 1 kHz
= 0 V, f = 1 MHz
= 0 V,
Unit
mW
mA
°C
°C
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
1.5
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.035
Typ.
3.0
1.7
10
28
⎯
⎯
⎯
⎯
TO-236
2-3F1C
2007-11-01
0.050
―
−2.5
Max
±50
3.0
14
⎯
⎯
⎯
⎯
2SK302
Unit: mm
Unit
mA
mS
nA
pF
pF
dB
dB
V
V
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2SK302-Y (TE85L,F) Summary of contents
Page 1
... MHz (Figure JEDEC TO-236 JEITA ― TOSHIBA 2-3F1C Weight: 0.012 g (typ.) Min Typ. Max ⎯ ⎯ ±50 ⎯ ⎯ 20 ⎯ 1.5 14 ⎯ ⎯ −2.5 ⎯ ⎯ 10 ⎯ ⎯ 3.0 ⎯ 0.035 0.050 ⎯ ⎯ 28 ⎯ 1.7 3.0 2007-11-01 2SK302 Unit: mm Unit ...
Page 2
... L : 1.0 mmφ silver plated copper wire 4 mmφ ID TAP at 1.0 T from coil end 1.0 mmφ silver plated copper wire 3 mmφ ID length 2 Marking Figure Test Circuit ps 2 2SK302 2007-11-01 ...
Page 3
... 3 2SK302 2007-11-01 ...
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... 4 2SK302 2007-11-01 ...
Page 5
... 5 2SK302 2007-11-01 ...
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... 6 2SK302 2007-11-01 ...
Page 7
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2SK302 2007-11-01 ...