TSDF02424XR-GS08 Vishay, TSDF02424XR-GS08 Datasheet - Page 2

• Manufacturer Part Number: TSDF02424XR-GS08
• Manufacturer: Vishay

Specifications of TSDF02424XR-GS08

• Application: VHF/UHF
• Continuous Drain Current: 0.025A
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 26/21dB
• Noise Figure (max): 1.3(Typ)dB
• Package Type: SC-70
• Pin Count: 6
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1pF
• Output Capacitance (typ)@vds: 0.9@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 160mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

TSDF02424X/TSDF02424XR
Vishay Semiconductors
All of following data and characteristics are valid
for operating either amplifier 1 (pin 1, 3, 2, 5) or
amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
T
Maximum Thermal Resistance
1)
Electrical DC Characteristics
T
Remark on improving intermodulation behavior:
By setting R
www.vishay.com
2
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient
Drain - source breakdown
voltage
Gate 1 - source breakdown
voltage
Gate 2 - source breakdown
voltage
Gate 1 - source leakage current + V
Gate 2 - source leakage current ± V
Drain - source operating current V
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
amb
amb
on glass fibre printed board (25 x 20 x 1.5) mm
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
G1
smaller than 56 kΩ, typical value of I
T
1)
I
+ I
± I
R
V
V
I
D
D
amb
DS
DS
DS
G1
= 10 μA, V
G1S
G2S
= 20 μA
G1S
G2S
= V
= 56 kΩ
= 5 V, V
= V
≤ 60 °C
= 10 mA, V
= 10 mA, V
= 5 V, V
= 5 V, V
RG1
RG1
Test condition
Test condition
Test condition
= 5 V, R
= 5 V, V
G2S
G1S
3
G2S
G1S
plated with 35 μm Cu
= 4, I
DSO
= V
G2S
G2S
= V
= V
G1
G2S
G2S
D
will raise and improved intermodulation behavior will be performed.
= V
= V
= 56 kΩ,
DS
DS
= 20 μA
= 4 V,
= 0
DS
DS
= 0
= 0
= 0 + V
= 0 ± V
V
V
V
Symbol
+ I
± I
G1S(OFF)
G2S(OFF)
(BR)DSS
(BR)G1SS
(BR)G2SS
I
+ V
DSO
G1SS
G2SS
± I
- V
Symbol
Symbol
R
G1/± G2SM
G1/G2SM
V
T
T
P
thChA
G1SM
I
DS
Ch
stg
D
tot
Min
0.5
0.8
12
7
7
8
- 55 to + 150
Value
Value
Typ.
160
150
450
1.5
1.0
25
10
13
8
6
Document Number 85088
Max
1.3
1.4
10
10
20
20
18
Rev. 1.3, 05-Sep-08
K/W
Unit
mW
Unit
mA
mA
°C
°C
V
V
V
Unit
mA
nA
nA
V
V
V
V
V