MRF9030MBR1 Freescale Semiconductor, MRF9030MBR1 Datasheet

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MRF9030MBR1

Manufacturer Part Number
MRF9030MBR1
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF9030MBR1

Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Power Gain (typ)@vds
20dB
Frequency (max)
1GHz
Package Type
TO-272 EP
Pin Count
3
Forward Transconductance (typ)
2.7S
Input Capacitance (typ)@vds
49@26VpF
Output Capacitance (typ)@vds
27@26VpF
Reverse Capacitance (typ)
1.2@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
41%
Mounting
Surface Mount
Mode Of Operation
2-Tone
Number Of Elements
1
Power Dissipation (max)
139000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / Rohs Status
Not Compliant
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface
• 200_C Capable Plastic Package
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Designed for broadband commercial and industrial applications with frequen-
Output Power
Mount.
13 inch Reel.
13 inch Reel.
Derate above 25°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — - 31 dBc
Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free terminations.
Test Methodology
C
= 25°C
Test Conditions
Characteristic
Rating
MRF9030MR1
MRF9030MBR1
Rating
3
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
Package Peak Temperature
CASE 1337 - 03, STYLE 1
CASE 1265 - 08, STYLE 1
MRF9030MBR1
MRF9030MBR1
MRF9030MR1
MRF9030MR1
TO - 272- 2
LATERAL N - CHANNEL
PLASTIC
TO - 270- 2
RF POWER MOSFETs
PLASTIC
945 MHz, 30 W, 26 V
MRF9030MR1 MRF9030MBR1
M2 (Minimum)
C7 (Minimum)
C6 (Minimum)
260
1 (Minimum)
- 65 to +150
BROADBAND
- 0.5, +65
- 0.5, + 15
Class
Value
Value
0.93
1.08
139
200
Rev. 9, 5/2006
MRF9030M
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Unit
°C
°C
W
°C
1

Related parts for MRF9030MBR1

MRF9030MBR1 Summary of contents

Page 1

... CASE 1265 - 08, STYLE 270- 2 PLASTIC MRF9030MR1 CASE 1337 - 03, STYLE 272- 2 PLASTIC MRF9030MBR1 Value Unit - 0.5, +65 Vdc - 0. Vdc 139 W 0.93 W/° +150 °C 200 °C Value Unit 1.08 °C/W Class 1 (Minimum) M2 (Minimum) C7 (Minimum) C6 (Minimum) Package Peak Temperature Unit 260 °C MRF9030MR1 MRF9030MBR1 1 ...

Page 2

... DD out 930.0 MHz 930.1 MHz and f1 = 960.0 MHz 960.1 MHz) Input Return Loss ( Vdc PEP 250 mA, DD out 930.0 MHz 930.1 MHz and f1 = 960.0 MHz 960.1 MHz) MRF9030MR1 MRF9030MBR1 2 = 25°c Unless Otherwise Noted) c Symbol I DSS I DSS I GSS V GS(th) V GS(Q) V ...

Page 3

... Chip Capacitors C8, C16, C17 10 μ Tantulum Chip Capacitors C9, C10 10 pF Chip Capacitors C13 1.8 pF Chip Capacitor (MRF9030MR1) 0.6- 4.5 Variable Capacitor, Gigatrim (MRF9030MBR1) C18 220 μF Electrolytic Chip Capacitor L1, L2 12.5 nH Coilcraft Inductors WB1, WB2 20 mil Brass Shim (0.250 x 0.250) ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 3. 930 - 960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 4 ...

Page 5

... I = 200 mA DQ 300 Vdc DD 375 945 MHz f2 = 945.1 MHz 250 OUTPUT POWER (WATTS) PEP out Output Power Vdc DD η 250 945 MHz OUTPUT POWER (WATTS) AVG. out Output Power MRF9030MR1 MRF9030MBR1 100 100 5 ...

Page 6

... Figure 9. Power Gain, Efficiency and IMD MRF9030MR1 MRF9030MBR1 Vdc η 250 945 MHz f2 = 945.1 MHz IMD OUTPUT POWER (WATTS) PEP out versus Output Power −20 −40 −60 100 RF Device Data Freescale Semiconductor ...

Page 7

... Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Note: Z was chosen based on tradeoffs between gain, output load power, drain efficiency and intermodulation distortion. Device Input Under Test Matching Network Z Z source load Output Matching Network MRF9030MR1 MRF9030MBR1 7 ...

Page 8

... Figure 11. Series Equivalent Source and Load Impedance (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 Ω load source f = 960 MHz f = 960 MHz f = 930 MHz f = 930 MHz 250 mA Watts (PEP out source load MHz Ω Ω 930 1.0 - j0.18 3.05 - j0.09 945 1.0 - j0.10 3.00 - j0.07 960 1 ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF9030MR1 MRF9030MBR1 9 ...

Page 10

... MRF9030MR1 MRF9030MBR1 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor NOTES MRF9030MR1 MRF9030MBR1 11 ...

Page 12

... MRF9030MR1 MRF9030MBR1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF9030MR1 MRF9030MBR1 13 ...

Page 14

... MRF9030MR1 MRF9030MBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... D .928 .932 23.57 23.67 .810 BSC 20.57 BSC D1 E .438 .442 11.12 11.23 E1 .248 .252 6.30 6.40 E2 .241 .245 6.12 6.22 F .025 BSC 0.64 BSC b1 .193 .199 4.90 5.05 c1 .007 .011 .18 .28 r1 .063 .068 1.60 1.73 .004 .10 aaa MRF9030MR1 MRF9030MBR1 15 ...

Page 16

... RoHS- compliant and/ free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF9030MR1 MRF9030MBR1 MRF9030M Rev. 9, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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