2SK3075 Toshiba, 2SK3075 Datasheet
2SK3075
Manufacturer Part Number
2SK3075
Description
Manufacturer
Toshiba
Datasheet
1.2SK3075.pdf
(4 pages)
Specifications of 2SK3075
Application
VHF/UHF
Channel Type
N
Continuous Drain Current
5A
Drain Source Voltage (max)
30V
Output Power (max)
7.5W(Min)
Power Gain (typ)@vds
11.7(Min)@9.6VdB
Package Type
PW-X
Pin Count
3
Operating Temp Range
-45C to 150C
Drain Efficiency (typ)
50(Min)%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
20000mW
Screening Level
Automotive
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3075
Manufacturer:
HOLKTEK
Quantity:
50 000
Company:
Part Number:
2SK3075
Manufacturer:
TOS
Quantity:
5 000
Company:
Part Number:
2SK3075
Manufacturer:
toshiba
Quantity:
30 000
Part Number:
2SK3075
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
RF Power MOSFET for VHF− and UHF−Band Power Amplifier
Absolute Maximum Ratings
Marking
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high
frequency Power Amplifier of telecommunications equipment.
Output Power
Power Gain
Drain Efficiency
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
Note: Using continuously under heavy loads (e.g. the application of high
*:
Tc = 25°C When mounted on a 1.6mm glass epoxy PCB
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
CHARACTERISTIC
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
: P
: G
: η
D
O
P
≥ 50%
≥ 7.5W
≥ 11.7dB
(Ta = 25°C)
SYMBOL
V
V
T
P
T
GSS
DSS
I
stg
D
D*
ch
2SK3075
−45~150
RATING
150
30
25
20
5
1
UNIT
°C
°C
W
V
V
A
Weight: 0.08 g (typ.)
JEDEC
JEITA
TOSHIBA
2−5N1A
—
—
2007-11-01
2SK3075
Unit: mm
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2SK3075 Summary of contents
Page 1
... Tc = 25°C When mounted on a 1.6mm glass epoxy PCB Marking 2SK3075 ≥ 7.5W ≥ 11.7dB ≥ 50% (Ta = 25°C) SYMBOL RATING UNIT V 30 DSS V 25 GSS 150 ° −45~150 °C stg 1 2SK3075 JEDEC — JEITA — TOSHIBA 2−5N1A Weight: 0.08 g (typ.) 2007-11-01 Unit: mm ...
Page 2
... SYMBOL TEST CONDITION 9. Iidle = 50mA (V GS η 520MHz 500mW 9.6V 0.5mA 20V DSS 10V GSS 2SK3075 MIN TYP. MAX 7.5 — — = adjust) 50 — — 11.7 — — 1.0 1.5 2.0 — — 10 — — 5 2007-11-01 UNIT μA μA ...
Page 3
... Caution These are only typical curves and devices are not necessarily guaranteed at these curves. 3 2SK3075 2007-11-01 ...
Page 4
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2SK3075 2007-11-01 ...