S594TX-GS08 Vishay, S594TX-GS08 Datasheet - Page 2
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S594TX-GS08
Manufacturer Part Number
S594TX-GS08
Description
Manufacturer
Vishay
Datasheet
1.S594TX-GS08.pdf
(6 pages)
Specifications of S594TX-GS08
Application
VHF/UHF
Continuous Drain Current
0.025A
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
26/21dB
Noise Figure (max)
1.3(Typ)dB
Package Type
SOT-143
Pin Count
3 +Tab
Input Capacitance (typ)@vds
1.6@5V@Gate 1pF
Output Capacitance (typ)@vds
0.9@5VpF
Reverse Capacitance (typ)
0.015@5VpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200@Ta=60CmW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
S594TX/S594TXR/S594TXRW
Vishay Semiconductors
Absolute Maximum Ratings
T
Maximum Thermal Resistance
1)
Electrical DC Characteristics
T
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
Using open collector switching transistor (inside of PLL), insert 10 kΩ collector resistor.
Electrical AC Characteristics
T
V
www.vishay.com
2
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient
Gate 1 - source breakdown
voltage
Gate 2 - source breakdown
voltage
Gate 1 - source leakage current + V
Gate 2 - source leakage current ± V
Drain current
Self-biased operating current
Gate 2 - source cut-off voltage
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
amb
amb
amb
DS
on glass fibre printed board (25 x 20 x 1.5) mm
= 5 V, V
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
Parameter
G2S
= 4 V, I
D
= I
G1S
DSP
< 0.7 V is feasible.
, f = 1 MHz
T
1)
± I
± I
- V
V
V
V
G
f = 200 MHz
G
f = 800 MHz
amb
DS
DS
DS
S
S
G1S
G2S
G1S
G1S
G2S
= 2 mS, G
= 3,3 mS, G
= 5 V, V
= 5 V, V
= 5 V, V
≤ 60 °C
= 10 mA, V
= 10 mA, V
= 5 V, V
= 5 V, V
= 5 V, V
Test condition
Test condition
Test condition
Test condition
G1S
G1S
G1S
L
3
G2S
G2S
G1S
= 0.5 mS,
L
= nc, V
plated with 35 μm Cu
= nc, I
= 0, V
= 1 mS,
G2S
G1S
= V
= V
= V
= V
= V
D
G2S
DS
G2S
DS
DS
= 20 μA
DS
DS
= 0
= 0
= 0
= 4 V
= 4 V
= 0 ± V
= 0 ± V
V
Symbol
Symbol
+ I
± I
G2S(OFF)
- I
C
(BR)G1SS
(BR)G2SS
|y
I
I
C
C
G
G
DSS
DSP
G1SS
issg1
± V
G1SS
G2SS
21s
± I
oss
rss
ps
ps
Symbol
Symbol
R
G1/G2SM
|
G1/G2SM
V
T
P
T
thChA
I
DS
Ch
stg
D
tot
Min
Min
0.8
50
20
17
7
7
6
- 55 to + 150
Value
Value
Typ.
Typ.
200
150
450
1.0
1.6
0.9
25
10
13
24
15
26
21
8
6
Document Number 85082
Max
Max
100
250
1.4
2.0
10
10
50
20
18
28
30
Rev. 1.2, 02-May-05
K/W
Unit
mW
Unit
mA
mA
°C
°C
V
V
Unit
Unit
mA
mS
μA
μA
nA
μA
dB
dB
pF
pF
fF
V
V
V