BF988 Vishay, BF988 Datasheet - Page 2

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BF988

Manufacturer Part Number
BF988
Description
Manufacturer
Vishay
Datasheet

Specifications of BF988

Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.03A
Drain Source Voltage (max)
12V
Power Gain (typ)@vds
28@8VdB
Noise Figure (max)
1.5(Typ)dB
Package Type
TO-50
Pin Count
4
Forward Transconductance (typ)
0.024S
Input Capacitance (typ)@vds
2.1@8V@Gate 1/1.2@8V@Gate 2pF
Output Capacitance (typ)@vds
1.05@8VpF
Reverse Capacitance (typ)
0.025@8VpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF988
Manufacturer:
TFK
Quantity:
3
Part Number:
BF988
Manufacturer:
STANLEY
Quantity:
10 000
BF988
Vishay Semiconductors
Maximum Thermal Resistance
1)
Electrical DC Characteristics
T
Electrical AC Characteristics
T
V
www.vishay.com
2
Channel ambient
Drain - source breakdown
voltage
Gate 1 - source breakdown
voltage
Gate 2 - source breakdown
voltage
Gate 1 - source leakage current ± V
Gate 2 - source leakage current ± V
Drain current
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
amb
amb
DS
on glass fibre printed board (40 x 25 x 1.5) mm
= 8 V, I
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz
1)
I
± I
± I
V
V
I
V
V
G
f = 200 MHz
G
f = 800 MHz
V
G
f = 200 MHz
G
f = 800 MHz
D
D
DS
DS
DS
G1S
G2S
S
S
S
S
= 10 µA, - V
G1S
G2S
= 20 µA
G1S
G2S
= 2 mS, G
= 3,3 mS, G
= 2 mS, G
= 3,3 mS, G
= 15 V, V
= 15 V, V
= 15 V, V
= 0, V
= 4 to - 2 V, f = 800 MHz
= 10 mA, V
= 10 mA, V
= 5 V, V
= 5 V, V
Test condition
Test condition
Test condition
G2S
G1S
G1S
G2S
L
L
G1S
3
G2S
G1S
= 0.5 mS,
= 0.5 mS,
L
L
= 4 V
plated with 35 µm Cu
= 0, V
= 1 mS,
= 1 mS,
= 0, I
G2S
G1S
= 4 V,
= - V
= V
= V
= V
= V
D
G2S
G2S
DS
DS
= 20 µA
DS
DS
= 0
= 0
= 4 V
= 4 V
= 0
= 0
BF988A
BF988B
BF988
Symbol
Part
C
C
|y
∆G
C
C
G
G
issg1
issg2
21s
F
F
oss
rss
ps
ps
ps
Symbol
R
|
thChA
± V
± V
- V
- V
V
Symbol
± I
± I
G1S(OFF)
G2S(OFF)
(BR)G1SS
(BR)G2SS
(BR)DS
I
I
I
DSS
DSS
DSS
G1SS
G2SS
16.5
Min
21
40
Min
9.5
12
7
7
4
4
Value
1.05
Typ.
450
2.1
1.2
1.5
24
25
28
20
1
Typ.
Document Number 85007
Max
2.5
Rev. 1.6, 15-Apr-05
Max
10.5
2.5
2.0
14
14
50
50
18
18
K/W
Unit
Unit
mS
pF
pF
pF
dB
dB
dB
dB
dB
fF
Unit
mA
mA
mA
nA
nA
V
V
V
V
V

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