TB2132FNG(O,EL) Toshiba, TB2132FNG(O,EL) Datasheet - Page 17

• Manufacturer Part Number: TB2132FNG(O,EL)
• Manufacturer: Toshiba

Specifications of TB2132FNG(O,EL)

• Lead Free Status / Rohs Status: Supplier Unconfirmed

2. PLL Block
Operating supply voltage range
Memory retention voltage range
Operating supply current
Memory retention current
Crystal oscillation frequency
Crystal oscillation start time
DATA at Pin 22 and CLOCK at Pin 23, CE at Pin 24
Output current
Input leak current
Input voltage
OUT1 (ST) at Pin 18
Output current
OUT2 (DO2) at Pin 19
Output current
MPX
Stereo
sensitivity
Stereo hysteresis
Capture challenge
Signal noise ratio
Muting attenuation
Characteristics
Characteristics
Characteristics
Characteristics
Characteristics
(
Unless otherwise specified, Ta = 25°C, V
ON
OFF
Low level
High level
Low level
High level
Low level
High level
Low level
V
Symbol
Symbol
Symbol
Symbol
V
Symbol
MUTE
L (OFF)
C.R.
I
I
I
V
I
I
I
I
L (ON)
V
V
V
S/N
I
OH1
OH1
DD1
DD2
f
OL1
OL1
OL1
V
I
HD
t
XT
IH1
DD
HD
IL1
st
LI
H
Circuit
Circuit
Circuit
Circuit
Circuit
Test
Test
Test
Test
Test
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
In Standby Mode
PLL operation (in pulse swallow
mode)
PLL operation (in direct divide
mode)
In Standby Mode
Crystal oscillation frequency =
75 kHz
Apply pilot signal (19 kHz)
Switched from monaural to
stereo operation, and from
stereo to monaural operation.
P = 20 mVrms
V
V
V
V
V
V
V
V
OL
IH
OH
OL
OH
OL
17
in
in
= 200 mVrms
= 200 mVrms
= 3.0 V, V
= 0.3 V
= 0.3V
= 0.3V
= V
= V
Test Condition
DD
DD
Test Condition
Test Condition
Test Condition
Test Condition
− 0.3 V
− 0.3 V
IL
⎯
⎯
= 0 V
DD
= 3.0 V)
Min
⎯
⎯
⎯
⎯
⎯
5
V
− 0.5
− 0.3
1.55
Min
Min
Min
Min
1.0
DD
0.8
1.2
0.5
1.8
⎯
⎯
⎯
⎯
⎯
⎯
0
×
Typ.
10
± 8
78
78
8
2
Typ.
Typ.
− 1.0
Typ.
− 0.8
Typ.
250
3.6
2.2
0.4
2.0
1.7
1.0
75
⎯
~
~
~
~
TB2132FNG
Max
14
⎯
⎯
⎯
⎯
⎯
2006-04-11
V
Max
± 1.0
Max
Max
Max
5.5
DD
0.2
5.5
5.5
1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
×
mVrms
mVrms
Unit
dB
dB
%
Unit
Unit
Unit
Unit
kHz
mA
mA
mA
mA
mA
mA
ms
µ A
V
V