MRF9180 Freescale Semiconductor, MRF9180 Datasheet

MRF9180

Manufacturer Part Number
MRF9180
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF9180

Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
40W
Power Gain (typ)@vds
17.5dB
Frequency (min)
865MHz
Frequency (max)
895MHz
Package Type
NI-1230
Pin Count
5
Forward Transconductance (typ)
6S
Output Capacitance (typ)@vds
77@26VpF
Reverse Capacitance (typ)
3.8@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Screw
Mode Of Operation
CDMA
Number Of Elements
1
Power Dissipation (max)
388000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

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Price
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Part Number:
MRF9180HR6
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Part Number:
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Quantity:
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© Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
frequencies from 865 to 895 MHz. The high gain and broadband performance
of this device make it ideal for large- signal, common- source amplifier
applications in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, I
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power
Derate above 25°C
Output Power — 40 Watts
Power Gain — 17 dB
Efficiency — 26%
Adjacent Channel Power -
750 kHz:
1.98 MHz:
-45.0 dBc in 30 kHz BW
-60.0 dBc in 30 kHz BW
C
= 25°C
Test Conditions
Characteristic
Rating
DQ
= 1400 mA
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF9180
LATERAL N-CHANNEL
CASE 375D-05, STYLE 1
880 MHz, 170 W, 26 V
RF POWER MOSFET
MRF9180R6
M1 (Minimum)
1 (Minimum)
-65 to +150
-0.5, +65
-0.5, +15
Value
Value
Class
2.22
0.45
388
150
200
NI-1230
Rev. 10, 5/2006
MRF9180R6
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF9180 Summary of contents

Page 1

... Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF9180 = 1400 mA DQ LATERAL N-CHANNEL Symbol V DSS ...

Page 2

... MHz 865.1 MHz) Input Return Loss ( Vdc 170 W PEP 1400 mA, DD out 865.0 MHz 865.1 MHz) 1. Each side of device measured separately. 2. Measurement made with device in push-pull configuration. 3. Part internally input matched. MRF9180R6 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS V GS(th) ...

Page 3

... Drain Efficiency ( Vdc 170 W CW out 880.0 MHz) 1. Measurement made with device in push-pull configuration. RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol P 1dB 1400 mA, η = 1400 mA, Min Typ Max Unit — 170 — W — 16.5 — dB — 55 — % MRF9180R6 3 ...

Page 4

... Coax1, Coax2 50 Ω, Semi Rigid Coax, 85 mil OD, 1.05″ Long Coax3, Coax4 L1, L2, L3 18.5 nH Mini Spring Inductors, Coilcraft L4 12.5 nH Mini Spring Inductor, Coilcraft 510 Ω, 1/10 W Chip Resistors R1, R2 Figure 1. 880 MHz Broadband Test Circuit Schematic MRF9180R6 C14 C16 C13 Z18 R1 ...

Page 5

... Figure 2. 880 MHz Broadband Test Circuit Component Layout RF Device Data Freescale Semiconductor MRF9180 B2 B4 900MHz PUSH PULL Rev 01 C14 C10 C16 R1 C17 C15 C12 B1 B3 C26 C27 C28 C22 L3 L4 C20 C18 C29 C19 L2 C21 C25 C23 C24 MRF9180R6 5 ...

Page 6

... DQ - 880 MHz f2 = 880.1 MHz -30 -40 -50 3rd Order -60 5th Order 7th Order - OUTPUT POWER (WATTS) PEP out Figure 6. Intermodulation Distortion Products versus Output Power MRF9180R6 6 TYPICAL CHARACTERISTICS Vdc 170 W (PEP) out I = 1400 mA DQ IMD IRL Two-Tone Measurement 100 kHz Tone Spacing 865 ...

Page 7

... OUTPUT POWER (WATTS) PEP out Output Power Vdc 1400 880 MHz IS‐95, Pilot, Sync, Paging Traffic Codes 8 through 13 750 MHz 1.98 MHz OUTPUT POWER (WATTS) AVG. out Figure 9. Power Gain, Efficiency and ACPR versus Output Power -20 -40 - -20 -40 -60 -80 100 MRF9180R6 7 ...

Page 8

... Z Z Input Matching Network Figure 10. Series Equivalent Source and Load Impedance MRF9180R6 865 MHz f = 865 MHz Z source f = 895 MHz f = 895 MHz = 5 Ω 1400 mA 170 W PEP DD DQ out source load Ω Ω MHz 865 2.95 - j0.00 3.83 - j1.02 880 2.48 - j0.67 3.55 - j1.38 895 2 ...

Page 9

... N 1.218 1.242 30.94 31. 0.120 0.130 3.05 3.30 R 0.355 0.365 9.01 9.27 S 0.365 0.375 9.27 9.53 aaa 0.013 REF 0.33 REF bbb 0.010 REF 0.25 REF ccc 0.020 REF 0.51 REF STYLE 1: PIN 1. DRAIN M 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF9180R6 9 ...

Page 10

... The following table summarizes revisions to this document. Revision Date • Data sheet archived. Part no longer manufactured. 10 Dec. 2009 MRF9180R6 10 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 11

... Denver, Colorado 80217 1-800-441-2447 or +1-303-675-2140 Fax: +1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF9180 Rev. 10, 5/2006 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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