BFP193T-GS08 Vishay, BFP193T-GS08 Datasheet - Page 3

• Manufacturer Part Number: BFP193T-GS08
• Manufacturer: Vishay

Specifications of BFP193T-GS08

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 80mA
• Dc Current Gain (min): 50
• Power Dissipation: 420mW
• Frequency (max): 8GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-143
• Lead Free Status / Rohs Status: Compliant

Electrical AC Characteristics
T
Package Dimensions in mm
Document Number 85015
Rev. 1.3, 05-Sep-08
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Third order intercept point at
output
amb
= 25 °C, unless otherwise specified
Parameter
96 12240
0.35 [0.014]
0.35 [0.014]
0.5 [0.020]
0.5 [0.020]
V
V
V
V
V
Z
f = 900 MHz
V
Z
f = 2 GHz
V
Z
f = 900 MHz
V
Z
f = 2 GHz
V
Z
V
Z
V
f = 900 MHz
S
S
S
S
0
0
CE
CB
CE
EB
CE
CE
CE
CE
CE
CE
CE
= 50 Ω, f = 900 MHz
= 50 Ω, f = 2 GHz
= Z
= Z
= Z
= Z
= 0.5 V, f = 1 MHz
= 8 V, I
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
= 8 V, I
BFP193T / BFP193TW / BFP193TRW
Sopt
Sopt
Sopt
Sopt
1.8 [0.071]
2.8 [0.110]
Test condition
2 [0.079]
, Z
, Z
, Z
, Z
3 [0.118]
C
C
C
C
C
C
C
C
L
L
L
L
= 50 mA, f = 1 GHz
= 10 mA,
= 10 mA,
= 30 mA,
= 30 mA,
= 30 mA,
= 30 mA,
= 50 mA,
= 50 Ω,
= 50 Ω,
= 50 Ω,
= 50 Ω,
1.8 [0.071]
1.6 [0.063]
0.75 [0.030]
0.35 [0.014]
0.9 [0.035]
0.5 [0.020]
foot print recommendation:
Symbol
|S
|S
C
C
C
G
G
IP
21e
21e
f
F
F
T
cb
ce
eb
pe
pe
3
|
|
0.8 [0.031]
0.8 [0.031]
2
2
1.9 [0.075]
2.35 [0.093]
2.6 [0.102]
Min
6
Vishay Semiconductors
1.7 [0.067]
0.25
Typ.
0.5
1.6
1.2
2.1
18
12
15
33
8
9
1.2 [0.047]
0.8 [0.031]
Max
0.9
www.vishay.com
dBm
GHz
Unit
pF
pF
pF
dB
dB
dB
dB
dB
dB
3