MMPQ3467 ON Semiconductor, MMPQ3467 Datasheet - Page 2
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MMPQ3467
Manufacturer Part Number
MMPQ3467
Description
Manufacturer
ON Semiconductor
Datasheet
1.MMPQ3467.pdf
(4 pages)
Specifications of MMPQ3467
Transistor Polarity
PNP
Number Of Elements
4
Collector-emitter Voltage
40V
Collector-base Voltage
40V
Emitter-base Voltage
5V
Collector Current (dc) (max)
1A
Dc Current Gain (min)
20
Power Dissipation
1.2W
Frequency (max)
190MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
16
Package Type
SOIC
Lead Free Status / Rohs Status
Not Compliant
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain — Bandwidth Product
Output Capacitance
Input Capacitance
Turn−On Time
Turn−Off Time
(I
(I
(I
(I
(V
(V
(I
(I
C
C
C
C
C
C
CB
EB
= −500 mAdc, V
= −500 mAdc, I
= −500 mAdc, I
= −50 mAdc, V
= −500 mAdc, I
= −500 mAdc, I
= −0.5 Vdc, I
= −10 Vdc, I
(1)
E
CE
C
B
B
B1
B1
CE
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= −50 mAdc)
= −50 mAdc)
= −10 Vdc, f = 100 MHz)
= −50 mAdc)
= I
= −1.0 Vdc)
Characteristic
B2
= −50 mAdc)
(1)
(1)
(T
A
= 25°C unless otherwise noted) (Continued)
http://onsemi.com
2
Symbol
V
V
CE(sat)
BE(sat)
h
C
C
t
t
f
on
off
FE
T
ob
ib
Min
20
—
—
—
—
—
—
—
−0.23
−0.9
Typ
190
10
55
20
60
—
Max
−0.5
−1.2
—
—
—
—
—
—
Unit
MHz
Vdc
Vdc
pF
pF
ns
ns
—