SD5401CY Vishay, SD5401CY Datasheet - Page 4

• Manufacturer Part Number: SD5401CY
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SD5401CY

• Number Of Elements: 4
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 75Ohm
• Drain-source On-volt: 10V
• Gate-source Voltage (max): -15V
• Continuous Drain Current: 50mA
• Power Dissipation: 500mW
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 14
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Typical Characteristics (Cont’d)
SD5000/5400 Series
4
100
0.1
10
10
8
6
4
2
0
1
5
4
3
2
1
0
Threshold Voltage vs. Substrate-Source Voltage
100
0
0
V
V
V
I
T
V
I
T
D
D
A
Capacitance vs. Gate-Source Voltage
DS
GS
A
DS
GS
= 10 mA
= 1 A
= 25 C
= 25 C
= 10 V, f = 1 MHz
= V
b
= 10 V
= V
is
–4
4
V
V
BS
DS
BS
GS
200
= V
– Body-Source Voltage (V)
– Gate-Source Voltage (V)
Input Admittance
f – Frequency (MHz)
TH
–8
8
g
is
–12
12
H
L
C
500
(GS+GD+GB)
C
C
(GD+DB)
(GS+SB)
C
(DG)
–16
16
1000
–20
20
100 A
100 nA
100 pA
10 A
10 nA
10 pA
1 A
1 nA
1 pA
100
100
0.1
10
10
1
1
Body Leakage Current vs. Drain-Body Voltage
100
0
V
I
T
I
I
I
I
Drain Open
D
D(off)
S(off)
GSS
SBO
A
DS
25
= 10 mA
(Diode)
= 25 C
Leakage Current vs. Temperature
I
= 10 V
@ V
@ V
GSS
@ V
@ V
4
V
GS
BS
SB
GD
GS
Forward Admittance
200
T
50
= 10 V
– Body-Source Voltage (V)
= 10 V
f – Frequency (MHz)
A
= V
= V
S-51850—Rev. G, 14-Apr-97
– Temperature (5 C)
BS
BD
8
g
fs
= –5 V, V
= –5 V, V
75
I
D
12
–b
= 13 mA
DS
SD
fs
1 mA
500
100
= 10 V
= 10 V
16
Siliconix
I
I
I
125
S(off)
SBO
D(off)
1000
20