UPA2706GR-E2 Renesas Electronics America, UPA2706GR-E2 Datasheet

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UPA2706GR-E2

Manufacturer Part Number
UPA2706GR-E2
Description
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPA2706GR-E2

Lead Free Status / Rohs Status
Supplier Unconfirmed
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

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UPA2706GR-E2 Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

DESCRIPTION The PA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES Low on-state resistance MAX DS(on 22.5 m ...

Page 4

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 5

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) ...

Page 6

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 4 0 Drain to Source Voltage - V DS ...

Page 7

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 Pulsed 4 4 100 T - Channel Temperature - °C ch SWITCHING ...

Page 8

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 Starting 12 0.00001 0.0001 0.001 L - Inductive Load - H 6 SINGLE ...

Page 9

The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

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