JS28F640J3D75 Micron Technology Inc, JS28F640J3D75 Datasheet - Page 22

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JS28F640J3D75

Manufacturer Part Number
JS28F640J3D75
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of JS28F640J3D75

Cell Type
NOR
Density
64Mb
Access Time (max)
75ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4M
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Compliant

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6.2
Table 8:
6.3
Table 9:
Notes:
1.
2.
Datasheet
22
Notes:
1.
2.
3.
4.
5.
6.
Symbol
V
V
V
V
PENLK
V
V
V
PENH
LKO
OH
OL
IH
IL
Symbol
C
C
sampled. not 100% tested.
T
OUT
Includes STS.
Sampled, not 100% tested.
Block erases, programming, and lock-bit configurations are inhibited when V
in the range between V
Block erases, programming, and lock-bit configurations are inhibited when V
the range between V
Includes all operational modes of the device including standby and power-up sequences
Input/Output signals can undershoot to -1.0v referenced to V
duration of 2ns or less, the V
A
IN
= +25 °C, f = 1 MHZ
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Erase and Lock-Bit Operations
V
or Lock-Bit Operations
V
PEN
PEN
CC
DC Voltage Characteristics
Numonyx™ Embedded Flash Memory (J3 v. D) Capacitance
Lockout Voltage
during Block Erase, Program,
DC Voltage specifications
Lockout during Program,
Capacitance
V
V
CCQ
CC
Parameter
Output Capacitance
Input Capacitance
LKO
PENLK
(min) and V
(max) and V
CCQ
Parameter
valid range is referenced to V
CC
(min), and above V
PENH
0.85 × V
V
CCQ
1
–0.5
Min
(min), and above V
2.0
2.7
2.0
32, 64, 128 Mb
32, 64, 128 Mb
0.2
CCQ
256 Mb
256 Mb
2.7 - 3.6 V
2.7 - 3.6 V
CC
V
(max).
SS
CCQ
SS
and can overshoot to V
.
Max
0.8
0.4
0.2
2.2
3.6
PENH
+ 0.5V
Numonyx™ Embedded Flash Memory (J3 v. D)
(max).
Type
12
16
6
8
PEN
CC
< V
Unit
≤ V
V
V
V
V
V
V
V
V
V
LKO
PENLK
Max
16
12
24
8
, and not guaranteed in
CCQ
V
V
I
V
V
I
V
V
I
V
V
I
, and not guaranteed
OL
OL
OH
OH
CC
CCQ
CC
CCQ
CC
CCQ
CC
CCQ
Test Conditions
= 2 mA
= 100 µA
= –2.5 mA
= –100 µA
= 1.0v for
= V
= V
= V
= V
Unit
= V
= V
= V
= V
pF
pF
CC
CC
CCMIN
CCMIN
CCQ
CCQ
CCQ
CCQ
Min
Min
Min
Min
Min
Min
V
Condition
V
November 2007
OUT
IN
= 0.0 V
= 0.0 V
308551-05
2, 5, 6
2, 5, 6
Notes
1, 2
1, 2
2, 3
3
4
2

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