TE28F128J3D75 Micron Technology Inc, TE28F128J3D75 Datasheet - Page 26

no-image

TE28F128J3D75

Manufacturer Part Number
TE28F128J3D75
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of TE28F128J3D75

Cell Type
NOR
Density
128Mb
Access Time (max)
75ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
24/23Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
16M/8M
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TE28F128J3D75
Manufacturer:
INTEL
Quantity:
74
Part Number:
TE28F128J3D75
Manufacturer:
INTEL
Quantity:
8 000
Part Number:
TE28F128J3D75
Manufacturer:
INTEL
Quantity:
20 000
Part Number:
TE28F128J3D75A
Manufacturer:
NIPPON
Quantity:
40 000
Part Number:
TE28F128J3D75B
Manufacturer:
MICRON
Quantity:
6 700
Part Number:
TE28F128J3D75D
Manufacturer:
HARRIS
Quantity:
1 543
Part Number:
TE28F128J3D75ES
Manufacturer:
INTEL
Quantity:
10 989
Part Number:
TE28F128J3D75ES
Manufacturer:
INTEL
Quantity:
20 000
Figure 13: 8-Word Asynchronous Page Mode Read
Notes:
1.
2.
Datasheet
26
CE
CE0, CE1, or CE2 that disables the device.
In this diagram, BYTE# is asserted high
X
low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CE
A[MAX:4] [A]
D[15:0] [Q]
A[3:1] [A]
WE# [W]
OE# [G]
RP# [P]
CEx [E]
BYTE#
R6
R5
R2
R7
R3
R4
1
R10
R1
R1
R15
2
Numonyx™ Embedded Flash Memory (J3 v. D)
7
X
high is defined at the first edge of
8
R10
R9
R8
November 2007
308551-05

Related parts for TE28F128J3D75