SI2308DS-T1 Vishay, SI2308DS-T1 Datasheet - Page 5

• Manufacturer Part Number: SI2308DS-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI2308DS-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.16Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 2A
• Power Dissipation: 1.25W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236
• Lead Free Status / Rohs Status: Not Compliant

SOT-23 (TO-236): 3-LEAD
Document Number: 71196
09-Jul-01
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
A
Dim
A
A
E
L
e
A
A
b
D
E
L
S
q
c
e
1
1
2
1
1
1
A
2
S
1
e
b
3
D
1
e
0.085
Min
0.89
0.01
0.88
0.35
2.80
2.10
1.20
0.40
3°
2
MILLIMETERS
E
1
0.95 BSC
1.90 BSC
0.64 Ref
0.50 Ref
E
C
Seating Plane
0.10 mm
0.004"
Max
1.12
0.10
1.02
0.50
0.18
3.04
2.64
1.40
0.60
C
8°
C
0.0004
0.0346
0.035
0.014
0.003
0.110
0.083
0.047
0.016
Min
Package Information
3°
L
L
1
INCHES
0.0374 Ref
0.0748 Ref
0.025 Ref
0.020 Ref
q
Vishay Siliconix
0.25 mm
Seating Plane
Gauge Plane
0.044
0.004
0.040
0.020
0.007
0.120
0.104
0.055
0.024
Max
www.vishay.com
8°
1