TPC8016H Toshiba, TPC8016H Datasheet - Page 4

• Manufacturer Part Number: TPC8016H
• Manufacturer: Toshiba
• Type: Power MOSFETr

Specifications of TPC8016H

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0057Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 15A
• Power Dissipation: 1.9W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

100
0.1
10
50
40
30
20
10
10
8
6
4
2
0
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
3.5
10
4.5
1
0.2
Drain-source voltage V
Gate-source voltage V
3.2
Drain current I
100
2
0.4
1
I
I
|Y
D
3.15
D
Ta = −55°C
fs
– V
– V
| – I
3
Ta = −55°C
DS
GS
100
D
0.6
D
25
Common source
Ta = 25°C, pulse test
GS
4
DS
(A)
Common source
V DS = 10 V
Pulse test
3.1
(V)
(V)
V GS = 2.7 V
0.8
25
10
3.05
5
3.0
2.9
2.8
1.0
30
6
4
100
0.8
0.6
0.4
0.2
20
16
12
10
8
4
0
1
0
1
0.1
0
0
4.5
10
3.5
2
0.4
Drain-source voltage V
3.8
Gate-source voltage V
Drain current I
I D = 15 A
4
1
3.3
R
V GS = 4.5 V
0.8
V
DS (ON)
I
DS
D
7.5
– V
10
– V
6
DS
GS
– I
1.2
D
D
Common source
Ta = 25°C, pulse test
10
GS
DS
8
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
(V)
V GS = 2.8 V
(V)
1.6
TPC8016-H
10
2006-11-16
3.2
2.9
3.1
3.0
100
2.0
12