MMBT589LT1 ON Semiconductor, MMBT589LT1 Datasheet
MMBT589LT1
Manufacturer Part Number
MMBT589LT1
Description
Manufacturer
ON Semiconductor
Datasheet
1.MMBT589LT1.pdf
(5 pages)
Specifications of MMBT589LT1
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
2A
Dc Current Gain (min)
100
Power Dissipation
710mW
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT589LT1
Manufacturer:
DIODES
Quantity:
1 928
Part Number:
MMBT589LT1
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MMBT589LT1G
Manufacturer:
ON
Quantity:
15 000
Company:
Part Number:
MMBT589LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT589LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBT589LT1G
High Current Surface Mount
PNP Silicon Switching
Transistor for Load
Management in
Portable Applications
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Total Device Dissipation FR−5 Board,
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation (Ref. Figure 8)
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
(Note 1)
Substrate, (Note 2) T
Derate above 25°C
(Note 2)
(Single Pulse < 10 sec.)
Characteristic
A
= 25°C
Rating
(T
A
A
= 25°C
= 25°C)
Symbol
Symbol
P
T
V
V
V
R
R
Dsingle
J
I
P
P
CEO
CBO
EBO
, T
I
CM
qJA
qJA
C
D
D
stg
−55 to +150
Value
−5.0
−1.0
−2.0
Max
−30
−50
310
403
710
176
575
2.5
5.7
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
mW
mW
mW
°C
A
†For information on tape and reel specifications,
MMBT589LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
1
30 VOLTS, 2.0 AMPS
PNP TRANSISTORS
ORDERING INFORMATION
2
BASE
G3 = Device Code
M
G
MARKING DIAGRAM
1
http://onsemi.com
3
1
= Date Code*
= Pb−Free Package
(Pb−Free)
COLLECTOR
Package
SOT−23
EMITTER
G3 M G
Publication Order Number:
G
3
2
SOT−23 (TO−236)
3,000 / Tape & Reel
CASE 318
STYLE 6
MMBT589LT1/D
Shipping
†
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MMBT589LT1 Summary of contents
Page 1
... MARKING DIAGRAM Device Code M = Date Code Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT−23 3,000 / Tape & Reel (Pb−Free) Publication Order Number: MMBT589LT1/D † ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mAdc Collector −Base Breakdown Voltage (I = −0.1 mAdc Emitter−Base Breakdown Voltage (I = −0.1 mAdc ...
Page 3
I , COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain versus Collector Current 1.0 0.9 V 0.8 BE(sat) 0.7 V BE(on) 0.6 0.5 0.4 0.3 0.2 0.1 V CE(sat) 0 1.0 ...
Page 4
D = 0.01 1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 SINGLE PULSE TEST 25°C amb 100 100 ...
Page 5
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT589LT1/D ...