SI2304DS-T1 Vishay, SI2304DS-T1 Datasheet - Page 4

• Manufacturer Part Number: SI2304DS-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI2304DS-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.117Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 2.5A
• Power Dissipation: 1.25W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236
• Lead Free Status / Rohs Status: Not Compliant

Si2304DS
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4
–0.0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
10
0.3
0.2
0.1
1
0.01
0.1
–50
0.2
2
1
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
–25
T
0.4
V
J
SD
= 150 C
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
J
– Temperature ( C)
25
0.6
10
Single Pulse
–3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
0.8
= 250 A
75
T
J
100
= 25 C
1.0
125
10
–2
Square Wave Pulse Duration (sec)
150
1.2
10
–1
10
0.6
0.5
0.4
0.3
0.2
0.1
8
6
4
2
0
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
V
2
1
GS
– Gate-to-Source Voltage (V)
0.10
Single Pulse Power
Single Pulse
4
T
C
= 25 C
Time (sec)
I
D
S-63633—Rev. D, 01-Nov-99
6
= 2.5 A
10
1.00
Document Number: 70756
8
30
10.00
10