SI4866DY Vishay, SI4866DY Datasheet - Page 3

• Manufacturer Part Number: SI4866DY
• Description: MOSFET Power N-Ch 12 Volt 11 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4866DY

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0055Ohm
• Drain-source On-volt: 12V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 11A
• Power Dissipation: 1.6W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 35 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / Rohs Status: Not Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71699
S09-0228-Rev. D, 09-Feb-09
0.015
0.012
0.009
0.006
0.003
0.000
50
10
6
5
4
3
2
1
0
1
0.00
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 17 A
0.2
5
On-Resistance vs. Drain Current
= 6 V
10
T
V
J
SD
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
10
- Total Gate Charge (nC)
0.4
V
I
D
GS
Gate Charge
- Drain Current (A)
20
= 2.5 V
15
0.6
30
20
0.8
V
T
GS
J
40
= 25 °C
25
1.0
= 4.5 V
30
1.2
50
0.040
0.032
0.024
0.016
0.008
0.000
4000
3200
2400
1600
800
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
C
GS
= 17 A
rss
2
= 4.5 V
1
V
V
DS
T
GS
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
4
25
Capacitance
C
2
oss
50
6
Vishay Siliconix
C
iss
3
75
Si4866DY
8
I
D
= 17 A
100
www.vishay.com
4
10
125
150
12
5
3