HN2D01F Toshiba, HN2D01F Datasheet
HN2D01F
Manufacturer Part Number
HN2D01F
Description
Manufacturer
Toshiba
Datasheet
1.HN2D01F.pdf
(4 pages)
Specifications of HN2D01F
Rectifier Type
Switching Diode
Configuration
Triple Parallel
Peak Rep Rev Volt
85V
Avg. Forward Curr (max)
0.08A
Rev Curr
0.5uA
Peak Non-repetitive Surge Current (max)
1A
Forward Voltage
1.2V
Operating Temp Range
-55C to 125C
Package Type
SM
Rev Recov Time
4ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HN2D01F
Manufacturer:
TOSHIBA
Quantity:
3 211
Part Number:
HN2D01F
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
HN2D01F(TE85L
Manufacturer:
TOSHIBA
Quantity:
3 100
Company:
Part Number:
HN2D01F(TE85L,F)
Manufacturer:
HIT
Quantity:
50
Company:
Part Number:
HN2D01F-TE85L
Manufacturer:
TOSH
Quantity:
3 556
Part Number:
HN2D01FU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Ultra High Speed Switching Application
Absolute Maximum Ratings
Electrical Characteristics
HN2D01F is composed of 3 independent diodes.
Low forward voltage
Fast reverse recovery time : t
Small total capacitance
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
(*) This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the absolute maximum ratings
per diodes is 75 %f the single diode one.
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristic
Characteristic
: V
: C
rr
TOSHIBA Diode Silicon Epitaxial Planar Type
F (3)
T
= 1.6ns (typ.)
= 0.5μF (typ.)
(Q1, Q2, Q3 Common Ta = 25°C)
= 0.98V (typ.)
(Ta = 25°C)
Symbol
Symbol
V
V
V
I
I
I
V
T
R (1)
R (2)
FSM
I
V
F (1)
F (2)
F (3)
C
t rr
FM
I
T
HN2D01F
RM
P
stg
O
R
T
j
Circuit
Test
―
―
―
―
―
―
―
−55~125
240 (*)
Rating
80 (*)
1 (*)
300
125
85
80
1
I
I
I
V
V
V
I
F
F
F
F
R
R
R
= 1mA
= 10mA
= 100mA
= 10mA (Fig.1)
= 30V
= 80V
= 0, f = 1MH
Test Condition
Unit
mW
mA
mA
°C
°C
V
V
A
z
JEDEC
JEITA
TOSHIBA
Weight: 0.015g (typ.)
Min
―
―
―
―
―
―
―
Typ.
0.62
0.75
0.98
0.5
1.6
―
―
1-3K1C
SC-74
―
HN2D01F
2007-11-01
Unit in mm
1.20
Max
0.1
0.5
3.0
4.0
―
―
Unit
μA
pF
ns
V
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HN2D01F Summary of contents
Page 1
... TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application HN2D01F is composed of 3 independent diodes. Low forward voltage : V F (3) Fast reverse recovery time : t rr Small total capacitance : C T Absolute Maximum Ratings Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current ...
Page 2
... Pin Assignment (Top View) Marking 2 HN2D01F 2007-11-01 ...
Page 3
... Fig.1 Reverse Recovery Time Test Circuit ( HN2D01F 2007-11-01 ...
Page 4
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 HN2D01F 2007-11-01 ...